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2N2822

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerSilicon Transistor Corp.oration
Download Datasheet Parametric View All

2N2822 Overview

Transistor

2N2822 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)25 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
surface mountNO
Base Number Matches1

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