Data Sheet No. 2N3467L
Type 2N3467L
Geometry 6706
Polarity PNP
Qual Level: JAN - JANTXV
Features:
•
•
•
•
General-purpose transistor for
switching and amplifier applica-
tons.
Housed in a
TO-5
case.
Also available in chip form using
the 6706 chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/348
which
Semicoa meets in all cases.
Generic Part Number:
2N3467
REF: MIL-PRF-19500/348
TO-5
Maximum Ratings
T
C
= 25 C unless otherwise specified
o
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Rating
40
40
5.0
1.0
-55 to +175
-55 to +175
Unit
V
V
V
mA
o
C
C
o
Data Sheet No. 2N3467L
Electrical Characteristics
T
C
= 25 C unless otherwise specified
o
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 µA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 µA, pulsed
Collector-Base Cutoff Current
V
CB
= 30 V
V
CB
= 30 V, T
A
= +150 C
Collector-Emitter Cutoff Current
V
EB
= 3.0 V, V
CE
= 30 V
o
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
CBO2
I
CEX
Min
40
40
5.0
---
---
---
Max
---
---
---
100
50
100
Unit
V
V
V
nA
µA
nA
ON Characteristics
Forward current Transfer Ratio
I
C
= 150 mA, V
CE
= 1.0 V (pulse test)
I
C
= 500 mA, V
CE
= 1.0 V (pulse test)
I
C
= 1.0 A, V
CE
= 5 V (pulse test)
I
C
= 150 mA, V
CE
= 1.0 V (pulse test), T = -55 C
o
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
Min
40
40
40
16
---
---
---
---
0.8
---
Max
---
120
---
---
0.35
0.6
1.2
1.0
1.2
1.6
Unit
---
---
---
---
V dc
V dc
V dc
V dc
V dc
V dc
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
I
C
= 500 mA, I
B
= 50 mA (pulse test)
I
C
= 1.0 A, I
B
= 100 mA (pulse test)
Small Signal Characteristics
Extrapolated Unity Gain Frequency
V
CE
= 10 V, I
C
= 50 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Symbol
f
t
C
OBO
C
IBO
Min
175
---
---
Max
500
25
100
Unit
MHz
pF
pF
Switching Characteristics
Delay Time
I
C
= 500 mA, I
B1
= 50 mA, V
EB
= 2 V
Rise Time
I
C
= 500 mA, I
B1
= 50 mA, V
EB
= 2 V
Storage Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Fall Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
Symbol
t
d
t
r
t
s
t
f
Min
---
---
---
---
Max
10
30
60
30
Unit
ns
ns
ns
ns
Talking
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