238A790-117T datasheet, PDF - EEWORLD Datasheet

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238A790-117T: DescriptionEEPROM, 32KX8, 100ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28; Categorystorage storage; File Size278KB，12 Pages; ManufacturerBAE Systems

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238A790-117T Overview

EEPROM, 32KX8, 100ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28

238A790-117T Parametric

Parameter Name	Attribute value
Parts packaging code	DFP
package instruction	DFP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	100 ns
JESD-30 code	R-CDFP-F28
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	2.8956 mm
Maximum supply voltage (Vsup)	3.46 V
Minimum supply voltage (Vsup)	3.14 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	12.7 mm
Base Number Matches	1

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32K x 8

Radiation Hardened Programmable

Read Only Memory (PROM) – 3.3V

Features

238A790

Product Description

Other

• Read/Write Cycle Times

≤100

ns (-55 °C to 125°C)

• SMD Number Pending

• Asynchronous Operation

• TTL Compatible I/O

• Single 3.3 V ±5% Power Supply

• Low Operating Power

• Packaging Options

• 28-Lead Flat Pack (0.500” x 0.720”)

Radiation

• Fabricated with Bulk CMOS 0.8 µm Process

• Total Dose Hardness through 2x10

rad(Si)

• Neutron Hardness through 1x10

N/cm

• SEU Immune (No Latches)

• Latchup Free

General Description

The 32K x 8 radiation hardened PROM is

pinout, function and package compatible with

commercial 28C256 series 32K x 8 EEPROMs,

such as SEEQ 28C256 and Atmel AT28C256.

The PROM is fabricated with BAE SYSTEMS’

QML-qualified radiation hardened technology,

and is designed for use in systems operating in

radiation environments.

The radiation hardened

Oxide-Nitride-Oxide (ONO) anti-fuse technology

features 0.8 micron, 5 V transistors in the data

path, and 1.0 micron, high voltage N and PFETs

in the programming path circuitry. The PROM

operates over the full military temperature

range, requires a single 3.3 V ± 5% power

supply, and is available with TTL compatible

I/O. Power consumption is typically 15

mW/MHz in operation and is less than 10

mW/MHz in the low power disabled mode. The

PROM operation is fully asynchronous, with an

associated typical access time of 100

nanoseconds. Synchronous operation is also

possible using CE as a clock.

BAE SYSTEMS’ enhanced bulk CMOS

technology is radiation hardened through the

use of advanced and proprietary design, layout,

and process hardening techniques.

BAE SYSTEMS • 9300 Wellington Road • Manassas, Virginia 20110-4122

238A790-117T Related Products

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Description	EEPROM, 32KX8, 100ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28	EEPROM, 32KX8, 100ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28	EEPROM, 32KX8, 100ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28	EEPROM, 32KX8, 100ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28	EEPROM, 32KX8, 100ns, Parallel, CMOS, CDFP28, 0.500 X 0.720 INCH, CERAMIC, DFP-28
Parts packaging code	DFP	DFP	DFP	DFP	DFP
package instruction	DFP,	DFP,	DFP,	DFP,	DFP,
Contacts	28	28	28	28	28
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	100 ns	100 ns	100 ns	100 ns	100 ns
JESD-30 code	R-CDFP-F28	R-CDFP-F28	R-CDFP-F28	R-CDFP-F28	R-CDFP-F28
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8
Number of functions	1	1	1	1	1
Number of terminals	28	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DFP	DFP	DFP	DFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	3 V	3 V	3 V	3 V	3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	2.8956 mm	2.8956 mm	2.8956 mm	2.8956 mm	2.8956 mm
Maximum supply voltage (Vsup)	3.46 V	3.46 V	3.46 V	3.46 V	3.46 V
Minimum supply voltage (Vsup)	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
width	12.7 mm	12.7 mm	12.7 mm	12.7 mm	12.7 mm
Base Number Matches	1	1	1	1	1
Filter level	-	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	-
total dose	-	200k Rad(Si) V	200k Rad(Si) V	200k Rad(Si) V	-

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