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32L259

Description
Rectifier Diode, Avalanche, 1 Element, 0.32A, 25900V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size56KB,1 Pages
ManufacturerEDAL
Websitehttp://www.edal.com/
Download Datasheet Parametric View All

32L259 Overview

Rectifier Diode, Avalanche, 1 Element, 0.32A, 25900V V(RRM), Silicon

32L259 Parametric

Parameter NameAttribute value
package instructionO-XALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.32 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage25900 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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