GaAs INFRARED EMITTING DIODE
LED55B
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
LED55C
LED56
0.030 (0.76)
NOM
0.255 (6.48)
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
SCHEMATIC
1
0.040 (1.02)
0.040 (1.02)
45°
Ø0.020 (0.51) 2X
3
ANODE
(Connected
To Case)
CATHODE
3
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1
DESCRIPTION
The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
2001 Fairchild Semiconductor Corporation
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GaAs INFRARED EMITTING DIODE
LED55B
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
V
R
P
D
P
D
LED55C
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
LED56
Unit
°C
°C
°C
°C
mA
A
V
mW
W
NOTE:
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into a solid angle of 2
#
steradians.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25°C) (All measurements made under pulse conditions)
SYMBOL
MIN
TYP
MAX
UNITS
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power LED55B
(7)
Total Power LED55C
(7)
Total Power LED56
(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
!
P
"
V
F
I
R
P
O
P
O
P
O
t
r
t
f
—
—
—
—
3.5
5.4
1.5
—
—
940
±8
—
—
—
—
—
1.0
1.0
—
—
1.7
10
—
—
—
—
—
nm
Deg.
V
µA
mW
mW
mW
µs
µs
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GaAs INFRARED EMITTING DIODE
LED55B
TYPICAL PERFORMANCE CURVES
Figure 1. Power Output vs. Input Current
100
50
20
10
P
O
, NORMALIZED POWER OUTPUT
5
2
1.0
0.5
0.2
0.1
0.05
0.02
0.01
.001
.002
.005
.01
.02
.05
0.1
0.2
0.5
1.0
2
NORMALIZED TO
I
F
= 100 mA
T
A
= 25°C
LED55C
LED56
PULSED
P
W
= 80
µsec
FORWARD
CURRENT
CONTINUOUS
FORWARD
CURRENT
5
10
I
F
, FORWARD CURRENT (A)
Figure 3. Forward Voltage vs. Forward Current
Figure 2. Power Output vs. Temperature
1.4
1.2
P
O
, NORMALIZED POWER OUTPUT
2.0
1.0
0.8
0.6
0.4
0.2
0
NORMALIZED TO
I
F
= 100 mA
T
A
= 25°C
I
F
, FORWARD CURRENT (A)
0
25
50
75
100
125
150
.01
T
A
, AMBIENT TEMPERATURE (°C)
0
1
2
3
4
5
6
7
8
9
10
1.0
0.8
0.6
0.4
0.2
0.1
.08
.06
.04
.02
-50
-25
10
8.0
6.0
4.0
V
F
, FORWARD VOLTAGE (V)
Figure 4. Forward Voltage vs. Forward Current
100
80
60
40
I
F
, FORWARD CURRENT (mA)
20
T
A
= 100°C
10
8
6
4
25°C
-55°C
RELATIVE OUTPUT (%)
100
Figure 5. Typical Radiation Pattern
80
60
40
2
1
20
.9
1.0
1.1
1.2
1.3
1.4
1.5
0
-50
-40
-30
-20
-10
0
10
20
30
40
50
V
F
, FORWARD VOLTAGE (V)
θ
- ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
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GaAs INFRARED EMITTING DIODE
LED55B
LED55C
LED56
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HERE-
IN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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