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LD262

Description
7.2 mm, 3 ELEMENT, INFRARED LED, 950 nm
CategoryLED optoelectronic/LED   
File Size40KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

LD262 Overview

7.2 mm, 3 ELEMENT, INFRARED LED, 950 nm

LD262 Parametric

Parameter NameAttribute value
Number of functions3
Minimum operating temperature-40 Cel
Maximum operating temperature80 Cel
Processing package descriptionROHS COMPLIANT, MINIATURE PACKAGE-6
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateEOL
Optoelectronic device typeINFRARED LED
structureSEPARATE, 3 ELEMENTS
forward_current_max0.0500 A
jesd_609_codee3
Rated output power9 mW
eak_wavelength__nm_950
shapeROUND
size7.2 mm
terminal coatingTIN
dditional_featureHIGH RELIABILITY
GaAs-IR-Lumineszenzdioden-Zeilen
GaAs Infrared Emitter Arrays
LD 260
LD 262 ... LD 269
7.4
7.0
1.9
1.7
0.5
0.4
2.54 mm
spacing
2.7
2.5
0.25
0.15
2.1
1.5
0.4 A
GEO06367
A
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
GaAs-IR-Lumineszenzdiode, hergestellt im
Schmelzepitaxieverfahren
q
Hohe Zuverlässigkeit
q
Gehäusegleich mit BPX 80-Serie
Anwendungen
q
Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb
q
Lochstreifenleser
q
Industrieelektronik
q
“Messen/Steuern/Regeln”
Features
q
GaAs infrared emitting diode, fabricated in a
liquid phase epitaxy process
q
High reliability
q
Same package as BPX 80 series
Applications
q
Miniature photointerrupters
q
Punched tape-readers
q
Industrial electronics
q
For control and drive circuits
Semiconductor Group
1
1997-11-01
feo06367
1.4
1.0
Collector (BPX 83)
Cathode (LD 263)
fez06365
0.7
0.6
0 ... 5
3.5
3.0
3.6
3.2
Chip
position
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