BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
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•
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
100
625
5.0
1.5
12
−55
to +150
Unit
Vdc
2
BASE
3
EMITTER
Collector - Base Voltage
V
CBO
Vdc
Emitter - Base Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
12
1
2
3
STRAIGHT LEAD
3
BENT LEAD
TAPE & REEL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING DIAGRAM
BC
54xy
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
y
A
Y
WW
G
= 6, 7, or 8
= A, B or C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
−
Rev. 7
1
Publication Order Number:
BC546/D
BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−
Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546/547/548
V
(BR)CEO
65
45
30
80
50
30
6.0
6.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
15
15
15
4.0
V
Symbol
Min
Typ
Max
Unit
Collector
−
Base Breakdown Voltage
(I
C
= 100
mAdc)
V
(BR)CBO
V
Emitter
−
Base Breakdown Voltage
(I
E
= 10
mA,
I
C
= 0)
V
(BR)EBO
V
Collector Cutoff Current
(V
CE
= 70 V, V
BE
= 0)
(V
CE
= 50 V, V
BE
= 0)
(V
CE
= 35 V, V
BE
= 0)
(V
CE
= 30 V, T
A
= 125°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
I
CES
nA
mA
−
BC547A
BC546B/547B/548B
BC548C
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
BC547A/548A
BC546B/547B/548B
BC548C
h
FE
−
−
−
110
110
110
110
200
420
−
−
−
90
150
270
−
−
−
180
290
520
120
180
300
0.09
0.2
0.3
0.7
−
−
−
450
800
800
220
450
800
−
−
−
0.25
0.6
0.6
−
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
Collector
−
Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
(I
C
= 10 mA, I
B
= See Note 1)
Base
−
Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
Base
−
Emitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
BC546
BC547
BC548
V
CE(sat)
−
−
−
−
V
V
BE(sat)
V
BE(on)
V
V
0.55
−
−
−
0.7
0.77
f
T
150
150
150
−
−
300
300
300
1.7
10
−
−
−
4.5
−
MHz
Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Small
−
Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
C
obo
C
ibo
h
fe
pF
pF
−
125
125
125
240
450
−
−
−
−
−
220
330
600
2.0
2.0
2.0
500
900
260
500
900
10
10
10
Noise Figure (I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2 kW, f = 1.0 kHz,
Df
= 200 Hz)
BC546
BC547
BC548
1. I
B
is value for which I
C
= 11 mA at V
CE
= 1.0 V.
NF
dB
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2
BC546B, BC547A, B, C, BC548B, C
BC547/BC548
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
5.0 10
1.0 2.0
20
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
V
BE(on)
@ V
CE
= 10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Figure 1. Normalized DC Current Gain
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
Figure 2. “Saturation” and “On” Voltages
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
10
20
0.2
I
B
, BASE CURRENT (mA)
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 4. Base−Emitter Temperature Coefficient
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current−Gain
−
Bandwidth Product
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3
BC546B, BC547A, B, C, BC548B, C
BC546
1.0
hFE, DC CURRENT GAIN (NORMALIZED)
V
CE
= 5 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 5.0 V
0.4
0.2
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.1 0.2
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
0
0.2
0.5
1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
T
A
= 25°C
1.6
20 mA
1.2
I
C
=
10 mA
50 mA
100 mA
200 mA
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.4
-1.8
q
VB
for V
BE
-2.2
-55°C to 125°C
0.8
0.4
-2.6
0
-3.0
0.2
0.5
5.0
1.0 2.0
10 20
I
C
, COLLECTOR CURRENT (mA)
50
100
200
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
Figure 9. Collector Saturation Region
40
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
10
6.0
4.0
C
ob
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
500
V
CE
= 5 V
T
A
= 25°C
200
100
50
20
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain
−
Bandwidth Product
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4
BC546B, BC547A, B, C, BC548B, C
ORDERING INFORMATION
Device
BC546B
BC546BG
BC546BRL1
BC546BRL1G
BC546BZL1G
BC547ARL
BC547ARLG
BC547AZL1G
BC547BG
BC547BRL1G
BC547BZL1G
BC547CG
BC547CZL1G
BC548BG
BC548BRL1G
BC548BZL1G
BC548CG
BC548CZL1G
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Box
5000 Units / Bulk
2000 / Ammo Box
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Box
5000 Units / Bulk
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
Embedded System
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