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PSMN1R3-30YL115

Description
MOSFET N-CH 30V 1.3 mOhm Logic Level MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size205KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PSMN1R3-30YL115 Overview

MOSFET N-CH 30V 1.3 mOhm Logic Level MOSFET

PSMN1R3-30YL115 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance1.3 mOhms
ConfigurationSingle
PackagingCut Tape
PackagingMouseReel
PackagingReel
Transistor Type1 N-Channel
Fall Time52 ns
Pd - Power Dissipation121 W
Rise Time108 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time106 ns
Typical Turn-On Delay Time64 ns
PSMN1R3-30YL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power convertors
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
T
j
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
-55
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 100 A; V
sup
30 V;
R
GS
= 50
Ω;
unclamped
V
GS
= 4.5 V; I
D
= 25 A;
V
DS
= 12 V; see
Figure 13;
see
Figure 14
-
Typ
-
-
-
-
-
Max
30
100
121
150
383
Unit
V
A
W
°C
mJ
drain-source voltage T
j
25 °C; T
j
150 °C
drain current
total power
dissipation
junction temperature
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
Q
GD
Q
G(tot)
gate-drain charge
total gate charge
-
-
9.3
46.6
-
-
nC
nC
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