A Product Line of
Diodes Incorporated
PAM8303C
ULTRA LOW EMI, 3W FILTERLESS
MONO CLASS-D AUDIO POWER AMPLIFIER
Description
The PAM8303C is a 3W mono filterless Class-D amplifier with high
PSRR and differential input that eliminate noise and RF rectification.
Features like 90% efficiency and small PCB area make the
PAM8303C Class-D amplifier ideal for cellular handsets. The filterless
architecture requires no external output filter, fewer external
components, less PCB area and lower system costs, and simplifies
application design.
The PAM8303C features short circuit protection and thermal
shutdown.
The PAM8303C is available in 9-ball WCSP, MSOP-8 and DFN 3x3
8-pin packages.
Pin Assignments
Features
Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz
High Efficiency up to 90% @1W with an 8Ω Speaker
Shutdown Current <1µA
3W@10% THD Output with a 4Ω Load at 5V Supply
Demanding Few External Components
Superior Low Noise without Input
Supply Voltage from 2.8V to 5.5V
Short Circuit Protection
Thermal Shutdown
Available in Space Saving Packages: 1.45mmx1.45mm
WCSP9, MSOP-8, DFN3x3-8
Pb-Free Package
Applications
Cellular Phones/Smart Phones
MP4/MP3
GPS
Digital Photo Frame
Electronic Dictionary
Portable Game Machines
PAM8303C
Document number: DSxxxxx Rev. 1 - 2
1 of 17
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303C
Typical Applications Circuit
Pin Descriptions
Pin
Name
OUT+
PVDD
VDD
IN-
IN+
SD
GND
OUT-
NC
WCSP(A)
C3
B2
B1
C1
A1
C2
A2, B3
A3
—
Pin Name
DFN3X3-8 (B) DFN3X3-8 (C)
1
5
2
—
3
6
4
4
5
3
6
1
7
7
8
8
—
2
MSOP-8 (B)
1
2
3
4
5
6
7
8
—
Function
Positive BTL Output
Power Supply
Analog Power Supply
Negative Differential Input
Positive Differential Input
Shutdown Terminal (active low)
Ground
Negative BTL Output
Functional Block Diagram
PAM8303C
Document number: DSxxxxx Rev. 1 - 2
2 of 17
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June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303C
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage
Input Voltage
Maximum Junction Temperature
Storage Temperature
Soldering Temperature
Rating
6.0
-0.3 to V
DD
+0.3
150
-65 to +150
250, 10 sec
Unit
V
°C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Supply Voltage Range
Ambient Temperature Range
Junction Temperature Range
Rating
2.8 to 5.5
-40 to +85
-40 to +125
Unit
V
°C
°C
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Note:
Package
WCSP 1.45x1.45
MSOP-8
DFN3x3-8
MSOP-8
Symbol
θ
JA
θ
JC
Max
90-220
180
47.9
75
Unit
°C/W
For the 9-pin CSP package, the thermal resistance is highly dependent on the PCB heat sink area.
2
2
For example, the
Θ
ja
can equal to 195°C/W with 50mm total area or 135°C/W with 500mm area. When
using ground and power planes, the value is around 90°C/W.
PAM8303C
Document number: DSxxxxx Rev. 1 - 2
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June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303C
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 2V/V, R
L
= L(33µH) + R + L(33µH), unless otherwise specified.)
Symbol
V
DD
Parameter
Supply Voltage
V
DD
= 5.0V
THD+N = 10%, f = 1KHz, R = 4Ω
V
DD
= 3.6V
V
DD
= 3.2V
V
DD
= 5.0V
THD+N = 1%, f = 1KHz, R = 4Ω
P
O
Output Power
THD+N = 10%, f = 1KHz, R = 8Ω
V
DD
= 3.6V
V
DD
= 3.2V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 3.2V
V
DD
= 5.0V
THD+N = 1%, f = 1KHz, R = 8Ω
V
DD
= 5.0V, P
O
= 1W, R = 8Ω
V
DD
= 3.6V, P
O
= 0.1W, R = 8Ω
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 3.2V, P
O
= 0.1W, R = 8Ω
V
DD
= 5.0V, P
O
= 0.5W, R = 4Ω
V
DD
= 3.6V, P
O
= 0.2W, R = 4Ω
V
DD
= 3.2V, P
O
= 0.1W, R = 4Ω
PSRR
Dyn
V
N
CMRR
η
Power Supply Ripple Rejection
Dynamic Range
Output Noise
Common Mode Rejection Ratio
Peak Efficiency
V
DD
= 3.6V, Inputs AC-Grounded
with C
IN
= 1µF
V
DD
= 5V, THD = 1%, R = 8Ω
Inputs AC-Grounded
V
IC
= 100m, V
PP
, f =1kHz
R
L
= 8Ω, THD = 10%
R
L
= 4Ω, THD = 10%
V
DD
= 5.0V
I
Q
I
SD
Quiescent Current
Shutdown Current
V
DD
= 3.6V
V
DD
= 3.0V
V
DD
= 3.0V to 5.0V
CSP Package, High Side PMOS
plus Low Side NMOS,
I = 500mA
MSOP/DFN package,
High Side PMOS plus
Low Side NMOS, I = 500mA
V
SD
= 0.3V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 3.0V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 3.0V
200
R = 8Ω
f = 1kHz
f = 217Hz
f = 1kHz
f = 10kHz
f = 1kHz
No A-Weighting
A-Weighting
40
85
80
85
f = 1kHz
f = 1kHz
V
DD
= 3.6V
V
DD
= 3.2V
Test Conditions
Min
2.8
2.85
1.65
1.20
2.50
1.15
0.85
1.65
0.75
0.55
1.3
0.55
0.40
3.00
1.80
1.35
2.66
1.30
1.0
1.8
0.9
0.7
1.5
0.72
0.55
0.28
0.40
0.55
0.20
0.35
0.5
-63
-62
-52
95
50
30
63
90
86
7.5
4.6
3.6
0.5
280
300
325
365
385
410
150
V
DD
= 3V to 5V
V
DD
= 3V to 5V
Input AC-Ground, V
DD
= 5V
V
DD
= 5V
V
DD
= 5V
1.5
0.3
250
300kΩ/R
I
10
50
300
10
7
5
2
350
375
400
420
450
500
KΩ
KHz
dB
mV
V
V
mA
µA
%
100
60
µV
dB
0.35
0.45
0.60
0.25
0.40
0.55
-55
-55
-40
%
%
W
W
W
W
Typ
Max
5.5
Units
V
dB
R
DS(ON)
Static Drain-to-Source
On-State Resistor
R
IN
f
SW
G
V
V
OS
V
IH
V
IL
Input Resistance
Switching Frequency
Closed Loop Gain
Output Offset Voltage
Enable Input High Voltage
Enable Input Low Voltage
PAM8303C
Document number: DSxxxxx Rev. 1 - 2
4 of 17
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8303C
Typical Performance Characteristics
(@T
A
= +25°C, V
DD
= 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)
PAM8303C
Document number: DSxxxxx Rev. 1 - 2
5 of 17
www.diodes.com
June 2013
© Diodes Incorporated
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