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BUK762R4-60E118

Description
MOSFET N-channel TrenchMOS intermed level FET
Categorysemiconductor    Discrete semiconductor   
File Size721KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK762R4-60E118 Overview

MOSFET N-channel TrenchMOS intermed level FET

BUK762R4-60E118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance2.4 mOhms
Vgs - Gate-Source Voltage4 V
ConfigurationSingle
PackagingReel
Transistor Type1 N-Channel
Pd - Power Dissipation357 W
Factory Pack Quantity800
Unit Weight0.139332 oz
BUK762R4-60E
28 July 2016
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with V
GS(th)
rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 48 V; V
GS
= 10 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
[1]
Min
-
-
-
Typ
-
-
-
Max
60
120
349
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
1.9
2.4
Dynamic characteristics
Q
GD
gate-drain charge
-
45.5
-
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