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BAV102_D87Z

Description
Diodes - General Purpose, Power, Switching LL-34 200V 600mA
Categorysemiconductor    Discrete semiconductor   
File Size120KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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Diodes - General Purpose, Power, Switching LL-34 200V 600mA

BAV102_D87Z Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerFairchild
Product CategoryDiodes - General Purpose, Power, Switching
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseLL-34
Peak Reverse Voltage200 V
Max Surge Current4 A
If - Forward Current0.2 A
ConfigurationSingle
Recovery Time50 ns
Vf - Forward Voltage1.25 V
Ir - Reverse Current0.1 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.5 mm
Length3.6 mm
TypeSmall Signal Switching Diode
Width1.5 mm
Factory Pack Quantity10000
Vr - Reverse Voltage200 V
Unit Weight0.001827 oz
BAV102 — High Voltage, General Purpose Diode
April 2013
BAV102
High Voltage, General Purpose Diode
Description
Cathode Band
A general purpose diode that couples high forward con-
ductance fast swiching speed and high blocking volt-
ages in a glass leadless LL-34 surface mount package.
Placement of the expansion gap has no relationship to
the location of the cathode terminal which is indicated by
the first color band.
SOD80
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
W
IV
I
O
I
F
i
f
I
FSM
T
STG
T
J
Parameter
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak Forward Current
Storage Temperature Range
Operating Junction Temperature
Pulse Width = 1.0 s
Pulse Width = 1.0
μs
Value
150
200
500
600
1.0
4.0
-65 to +200
-65 to +200
Units
V
mA
mA
mA
A
A
°C
°C
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Linear Derating Factor from T
A
= 25°C
Thermal Resistance, Junction to Ambient
Value
500
3.33
350
Units
mW
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation
BAV102 Rev. 1.1.0
www.fairchildsemi.com
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