LC35V256ET-70W datasheet, PDF - EEWORLD Datasheet

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LC35V256ET-70W: Description256K (32K words x 8 bits) SRAM Control pins: OE and CE; Categorystorage storage; File Size38KB，6 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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LC35V256ET-70W Overview

256K (32K words x 8 bits) SRAM Control pins: OE and CE

LC35V256ET-70W Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SANYO
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP28,.53,22
Contacts	28
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	11.8 mm
memory density	262144 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature	-10 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP28,.53,22
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Minimum standby current	2 V
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.55 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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Ordering number : ENN6304

CMOS IC

LC35W256EM, ET-10W

256K (32K words

8 bits) SRAM

Control pins: OE and CE

Overview

The LC35W256EM-10W and LC35W256ET-10W are

asynchronous silicon-gate CMOS SRAMs with a 32768-

word by 8-bit structure. These are full-CMOS devices

with 6 transistors per memory cell, and feature ultralow-

voltage operation, a low operating current drain, and an

ultralow standby current. Control inputs include OE for

fast memory access and CE for power saving and device

selection. This makes these devices optimal for systems

that require low power or battery backup, and makes

memory expansion easy. The ultralow standby current

allows these devices to be used with capacitor backup as

well.

Package Dimensions

unit: mm

3187A-SOP28D

[LC35W256EM-10W]

0.15

18.0

Features

• Supply voltage range: 2.7 to 3.6 V

• Access time: 100 ns (maximum)

• Standby current: 0.8 µA (Ta

≤

60°C)

4.0 µA (Ta

≤

70°C)

• Operating temperature: –10 to +70°C

• Data retention voltage: 2.0 to 3.6 V

• All I/O levels: CMOS compatible (0.8 V

, 0.2 V

)

• Input/output shared function pins, 3-state output pins

• No clock required (fully static circuits)

• Package

28-pin SOP (450 mil) plastic package:

LC35W256EM-10W

28-pin TSOP (8

13.4 mm) plastic package:

LC35W256ET-10W

0.4

1.27

0.1

2.3

SANYO: SOP28D

unit: mm

3221-TSOP28 (Type I)

[LC35W256ET-10W]

11.8

1.27max

28 1

0.55

8.1

0.2

0.125

0.08

SANYO: TSOP28 (Type I)

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

12800RM (OT) No. 6304-1/6

0.5

13.4

1.0

11.8

9.8

8.4

LC35V256ET-70W Related Products

	LC35V256ET-70W	LC35W256EM-10W	LC35W256EM	LC35W256ET-10W	LC35V256EM-70W	LC35V256EM
Description	256K (32K words x 8 bits) SRAM Control pins: OE and CE	256K (32K words x 8 bits) SRAM Control pins: OE and CE	256K (32K words x 8 bits) SRAM Control pins: OE and CE	256K (32K words x 8 bits) SRAM Control pins: OE and CE	Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28	256K (32K words x 8 bits) SRAM Control pins: OE and CE
Parts packaging code	TSOP	SOIC	-	TSOP	SOIC	-
package instruction	TSOP1, TSSOP28,.53,22	SOP, SOP28,.45	-	TSOP1, TSSOP28,.53,22	SOP, SOP28,.45	-
Contacts	28	28	-	28	28	-
Reach Compliance Code	unknow	unknow	-	unknow	unknown	-
ECCN code	EAR99	EAR99	-	EAR99	EAR99	-
Maximum access time	70 ns	100 ns	-	100 ns	70 ns	-
I/O type	COMMON	COMMON	-	COMMON	COMMON	-
JESD-30 code	R-PDSO-G28	R-PDSO-G28	-	R-PDSO-G28	R-PDSO-G28	-
length	11.8 mm	18 mm	-	11.8 mm	18 mm	-
memory density	262144 bi	262144 bi	-	262144 bi	262144 bit	-
Memory IC Type	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	-
memory width	8	8	-	8	8	-
Number of functions	1	1	-	1	1	-
Number of terminals	28	28	-	28	28	-
word count	32768 words	32768 words	-	32768 words	32768 words	-
character code	32000	32000	-	32000	32000	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	70 °C	70 °C	-	70 °C	70 °C	-
Minimum operating temperature	-10 °C	-10 °C	-	-10 °C	-10 °C	-
organize	32KX8	32KX8	-	32KX8	32KX8	-
Output characteristics	3-STATE	3-STATE	-	3-STATE	3-STATE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	TSOP1	SOP	-	TSOP1	SOP	-
Encapsulate equivalent code	TSSOP28,.53,22	SOP28,.45	-	TSSOP28,.53,22	SOP28,.45	-
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	-
Parallel/Serial	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	-
power supply	3.3 V	3/3.3 V	-	3/3.3 V	3.3 V	-
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-
Minimum standby current	2 V	2 V	-	2 V	2 V	-
Maximum slew rate	0.025 mA	0.018 mA	-	0.018 mA	0.025 mA	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	-	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	2.7 V	-	2.7 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	3 V	-	3 V	3.3 V	-
surface mount	YES	YES	-	YES	YES	-
technology	CMOS	CMOS	-	CMOS	CMOS	-
Temperature level	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	-
Terminal form	GULL WING	GULL WING	-	GULL WING	GULL WING	-
Terminal pitch	0.55 mm	1.27 mm	-	0.55 mm	1.27 mm	-
Terminal location	DUAL	DUAL	-	DUAL	DUAL	-
width	8 mm	8.4 mm	-	8 mm	8.4 mm	-

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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