Agilent HCPL-814
AC Input Phototransistor
Optocoupler
High Density Mounting Type
Data Sheet
Features
• AC input response
• High input-output isolation voltage
(V
iso
= 5,000 V
rms
)
• Low collector dark current
(I
CEO
: max. 10
-7
A at V
CE
= 20 V)
• Current transfer ratio
(CTR: min. 20% at I
F
=
±
1 mA,
V
CE
= 5 V)
• Response time
(t
r
: typ. 4
µs
at V
CE
= 2 V, I
C
= 2 mA,
R
L
= 100
Ω)
• Compact dual-in-line package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2
approved
• Options available:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bend for surface
mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• Detecting or monitoring AC signals
• AC line/digital logic isolation
• Programmable logic controllers
• AC/DC – input modules
Description
The HCPL-814 contains a
phototransistor, optically coupled
to two light emitting diodes
connected inverse parallel. It can
operate directly by AC input
current. It is packaged in a 4-pin
DIP package and available in wide-
lead spacing option and lead bend
SMD option. Input-output isolation
voltage is 5000 V
rms
. Response
time, t
r
, is typically 4
µs
and
minimum CTR is 20% at input
current of
±
1 mA.
Ordering Information
Specify Part Number followed by
Option Number (if desired).
HCPL-814-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
00A = Rank Mark A
Functional Diagram
1
4
2
3
1. ANODE, CATHODE
2. CATHODE, ANODE
3. EMITTER
4. COLLECTOR
CAUTION:
It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
HCPL-814-000E
4.6
±
0.5
(0.181)
7.62
±
0.3
(0.3)
DATE CODE *1
LEAD FREE
ANODE
A 814
Y WW
3.5
±
0.5
(0.138)
0.5 TYP.
(0.02)
6.5
±
0.5
(0.256)
2.8
±
0.5
(0.110)
RANK *2
3.3
±
0.5
(0.130)
0.5
±
0.1
(0.02)
2.54
±
0.25
(0.1)
0.26
(0.010)
7.62 ~ 9.98
DIMENSIONS IN MILLIMETERS AND (INCHES)
HCPL-814-060E
4.6
±
0.5
(0.181)
7.62
±
0.3
(0.3)
DATE CODE *1
LEAD FREE
ANODE
A 814 V
Y WW
3.5
±
0.5
(0.138)
0.5 TYP.
(0.02)
6.5
±
0.5
(0.256)
2.8
±
0.5
(0.110)
RANK *2
3.3
±
0.5
(0.130)
0.5
±
0.1
(0.02)
2.54
±
0.25
(0.1)
0.26
(0.010)
7.62 ~ 9.98
DIMENSIONS IN MILLIMETERS AND (INCHES)
HCPL-814-W00E
4.6
±
0.5
(0.181)
7.62
±
0.3
(0.3)
DATE CODE *1
LEAD FREE
ANODE
A 814
Y WW
3.5
±
0.5
(0.138)
2.3
±
0.5
(0.09)
6.9
±
0.5
(0.272)
6.5
±
0.5
(0.256)
2.8
±
0.5
(0.110)
RANK *2
0.5
±
0.1
(0.02)
2.54
±
0.25
(0.1)
0.26
(0.010)
10.16
±
0.5
(0.4)
DIMENSIONS IN MILLIMETERS AND (INCHES)
2
HCPL-814-300E
4.6
±
0.5
(0.181)
7.62
±
0.3
(0.3)
DATE CODE *1
LEAD FREE
ANODE
A 814
Y WW
3.5
±
0.5
(0.138)
6.5
±
0.5
(0.256)
1.2
±
0.1
(0.047)
2.54
±
0.25
(0.1)
0.35
±
0.25
(0.014)
1.0
±
0.25
(0.039)
10.16
±
0.3
(0.4)
0.26
(0.010)
RANK *2
DIMENSIONS IN MILLIMETERS AND (INCHES)
Temperature (°C)
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
30 seconds
250°C
217°C
200°C
260°C (Peak Temperature)
150°C
60 sec
25°C
60 ~ 150 sec
90 sec
Time (sec)
60 sec
Absolute Maximum Ratings
Parameters
Storage Temperature
Ambient Operating Temperature
Lead Solder Temperature for 10s
(1.6 mm below seating plane)
Average Forward Current
Input Power Dissipation
Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage
(AC for 1 minute, R.H. = 40 ~ 60%)
[1]
Symbol
T
S
T
A
T
sol
I
F
P
I
I
C
V
CEO
V
ECO
P
C
P
tot
V
iso
Min.
–55
–30
Max.
125
100
260
±50
70
50
35
6
150
200
5000
Units
˚C
˚C
˚C
mA
mW
mA
V
V
mW
mW
V
rms
3
Electrical Specifications (T
A
= 25˚C)
Parameter
Symbol
Forward Voltage
V
F
Terminal Capacitance
C
t
Collector Dark Current
I
CEO
Collector-Emitter Breakdown Voltage BV
CEO
Emitter-Collector Breakdown Voltage BV
ECO
Collector Current
Current Transfer Ratio
[2]
Collector-Emitter Saturation Voltage
Isolation Resistance
Floating Capacitance
Cut-off Frequency
Response Time (Rise)
Response Time (Fall)
Rank Mark
A
No Mark
CTR (%)
50 ~ 150
20 ~ 300
I
C
CTR
V
CE(sat)
R
iso
C
f
f
c
t
r
t
f
Conditions
I
F
=
±1
mA,
V
CE
= 5 V,
T
A
= 25˚C
Min.
–
–
–
35
6
0.2
20
–
5 x 10
10
–
15
–
–
Typ.
1.2
50
–
–
–
–
–
0.1
1 x 10
11
0.6
80
4
3
Max.
1.4
250
100
–
–
3
300
0.2
–
1
–
18
18
Units
V
pF
nA
V
V
mA
%
V
Ω
pF
kHz
µs
µs
Test Conditions
I
F
=
±20
mA
V = 0, f = 1 kHz
V
CE
= 20 V, I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
E
= 10
µA,
I
F
= 0
I
F
=
±1
mA,
V
CE
= 5 V
I
F
=
±20
mA, I
C
= 1 mA
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
V
CE
= 5 V, I
C
= 2 mA
R
L
= 100
Ω,
–3 dB
V
CE
= 2 V, I
C
= 2 mA,
R
L
= 100
Ω
Notes:
1. Isolation voltage shall be measured using the following method:
(a) Short between anode and cathode on the primary side and between collector and emitter
on the secondary side.
(b) The isolation voltage tester with zero-cross circuit shall be used.
(c) The waveform of applied voltage shall be a sine wave.
I
2.
CTR =
C
x 100%
I
F
60
I
F
– FORWARD CURRENT – mA
P
C
– COLLECTOR POWER DISSIPATION – mW
200
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
6
T
A
= 25°C
5
4
3
2
1
0
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 3 mA
I
C
= 5 mA
I
C
= 7 mA
50
40
30
20
10
0
-30
150
100
50
0
25
50
75
100
125
0
-30
0
25
50
75
100
125
0
2.5
5.0
7.5
10.0
12.5
15.0
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
I
F
– FORWARD CURRENT – mA
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Collector-emitter saturation voltage
vs. forward current.
4
CTR – CURRENT TRANSFER RATIO – %
500
140
I
C
– COLLECTOR CURRENT – mA
50
I
F
– FORWARD CURRENT – mA
200
100
50
20
10
5
2
1
0
T
A
= 75°C
T
A
= 50°C
T
A
= 25°C
120
100
80
60
40
20
V
CE
= 5 V
T
A
= 25°C
T
A
= 25°C
I
F
= 30 mA
T
A
= 0°C
T
A
= -25°C
40
P
C
(MAX.)
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
30
20
10
I
F
= 1 mA
0.5
1.0
1.5
2.0
2.5
3.0
0
0.1 0.2 0.5 1
2
5 10 20
50 100
0
0
1
2
3
4
5
6
7
8
9 10
V
F
– FORWARD VOLTAGE – V
I
F
– FORWARD CURRENT – mA
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
RELATIVE CURRENT TRANSFER RATIO – %
I
CEO
– COLLECTOR DARK CURRENT – A
150
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
0.10
I
F
= 5 mA
V
CE
= 5 V
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
10
-12
-30
I
F
= 20 mA
I
C
= 1 mA
0.08
100
0.06
0.04
50
0.02
0
-30
0
25
50
75
100
0
-30
0
20
40
60
80
100
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
Figure 7. Relative current transfer ratio vs.
temperature.
Figure 8. Collector-emitter saturation
voltage vs. temperature.
Figure 9. Collector dark current vs.
temperature.
100
50
RESPONSE TIME – µs
V
CE
= 2 V
VOLTAGE GAIN AV – dB
20
10
5
2
1
0.5
0.2
0.1
I
C
= 2 mA
T
A
= 25°C
t
r
t
f
t
d
t
s
0
V
CE
= 2 V
I
C
= 2 mA
T
A
= 25°C
R
L
= 10 kΩ
-10
R
L
= 1 kΩ
R
L
= 100
Ω
0.1 0.2
0.5
1
2
5
10
-20
0.2
0.5 1 2
5 10
100
1000
R
L
– LOAD RESISTANCE – kΩ
f – FREQUENCY – kHz
Figure 10. Response time vs. load resistance.
Figure 11. Frequency response.
5
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