KRC667E datasheet, PDF - EEWORLD Datasheet

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KRC667E: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); CategoryDiscrete semiconductor The transistor; File Size68KB，6 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRC667E Overview

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC667E Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-F5
Number of components	2
Number of terminals	5
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION

KRC666E~KRC672E

EPITAXIAL PLANAR NPN TRANSISTOR

FEATURES

With Built-in Bias Resistors.

Reduce a Quantity of Parts and Manufacturing Process.

Simplify Circuit Design.

DIM

MILLIMETERS

1.6 + 0.05

1.0 + 0.05

1.6 + 0.05

_ 0.05

1.2+

0.50

0.2 + 0.05

_ 0.05

0.5 +

0.12 + 0.05

EQUIVALENT CIRCUIT

OUT

TYPE NO.

KRC666E

R1(k

2.2

4.7

100

)

R2(k

2.2

4.7

100

)

KRC667E

KRC668E

KRC669E

COMMON

1. Q

IN (BASE)

2. Q

, Q

COMMON (EMITTER)

3. Q

IN (BASE)

4. Q

OUT (COLLECTOR)

5. Q

OUT (COLLECTOR)

KRC670E

KRC671E

KRC672E

TESV

EQUIVALENT CIRCUIT (TOP VIEW)

MAXIMUM RATING (Ta=25

Output Voltage

)

SYMBOL

KRC666E~672E

KRC666E

KRC667E

KRC668E

CHARACTERISTIC

RATING

10, -5

12, -10

12,-5

UNIT

Input Voltage

KRC669E

KRC670E

KRC671E

KRC672E

20, -7

30, -10

40, -15

40, -10

Output Current

Power Dissipation

Junction Temperature

Storage Temperature Range

* Total Rating.

KRC666E~672E

stg

100

200

150

-55 150

Marking

Type Name

MARK SPEC

TYPE

MARK

KRC666E KRC667E KRC668E KRC669E KRC670E KRC671E KRC672E

2002. 7. 10

Revision No : 2

1/6

KRC667E Related Products

	KRC667E	KRC672E	KRC671E	KRC666E	KRC670E	KRC669E	KRC668E
Description	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
Maker	KEC	KEC	KEC	KEC	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5
Contacts	5	5	5	5	5	5	5
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 0.21	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 2.13	BUILT-IN BIAS RESISTOR RATIO IS 4.55
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	20	62	33	33	24	30	33
JESD-30 code	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5
Number of components	2	2	2	2	2	2	2
Number of terminals	5	5	5	5	5	5	5
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz

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