KRA559U datasheet, PDF - EEWORLD Datasheet

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KRA559U: DescriptionEPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); CategoryDiscrete semiconductor The transistor; File Size84KB，4 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRA559U Overview

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRA559U Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G5
Contacts	5
Reach Compliance Code	unknown
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC)	0.1 A
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

With Built-in Bias Resistors

KRA557U~KRA559U

EPITAXIAL PLANAR PNP TRANSISTOR

Simplify Circuit Design

Reduce a Quantity of Parts and Manufacturing Process

High Packing Density.

DIM

MILLIMETERS

2.00 + 0.20

_ 0.1

1.3 +

2.1 + 0.1

1.25 + 0.1

0.65

0.2+0.10/-0.05

0-0.1

0.9 + 0.1

0.15+0.1/-0.05

EQUIVALENT CIRCUIT

OUT

BIAS RESISTOR VALUES

TYPE NO.

KRA557U

R1(k

)

R2(k

)

KRA558U

KRA559U

1. Q

IN (BASE)

2. Q

, Q

COMMON (EMITTER)

3. Q

IN (BASE)

4. Q

OUT (COLLECTOR)

5. Q

OUT (COLLECTOR)

COMMON(+)

USV

EQUIVALENT CIRCUIT (TOP VIEW)

MAXIMUM RATING (Ta=25

Output Voltage

)

SYMBOL

KRA557U

559U

CHARACTERISTIC

RATING

-50

-30, 6

UNIT

KRA557U

Input Voltage

KRA558U

KRA559U

Output Current

Power Dissipation

Junction Temperature

Storage Temperature Range

* Total Rating.

KRA557U

559U

stg

-40, 7

-40, 15

-100

200

150

-55

Type Name

150

Marking

MARK SPEC

TYPE

MARK

KRA557U

KRA558U

KRA559U

2002. 1. 24

Revision No : 2

1/4

KRA559U Related Products

	KRA559U	KRA558U	KRA557U
Description	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
Maker	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5
Contacts	5	5	5
Reach Compliance Code	unknown	unknown	unknown
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	80	80
JESD-30 code	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
Number of components	2	2	2
Number of terminals	5	5	5
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	1

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