KRA523T datasheet, PDF - EEWORLD Datasheet

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KRA523T: DescriptionEPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); CategoryDiscrete semiconductor The transistor; File Size67KB，5 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRA523T Overview

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRA523T Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G5
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	47
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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SEMICONDUCTOR

TECHNICAL DATA

HIGH CURRENT SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.

FEATURES

With Built-in Bias Resistors.

Simplify Circuit Design.

Reduce a Quantity of Parts and Manufacturing Process.

High Output Current : -800mA.

KRA521T~KRA526T

EPITAXIAL PLANAR PNP TRANSISTOR

DIM MILLIMETERS

2.9 + 0.2

1.6+0.2/-0.1

0.70 + 0.05

0.4 + 0.1

2.8+0.2/-0.3

1.9 + 0.2

0.95

0.16 + 0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

EQUIVALENT CIRCUIT

OUT

TYPE NO.

KRA521T

KRA522T

KRA523T

KRA524T

R1 (k )

2.2

4.7

2.2

R2 (k

2.2

4.7

)

1. Q

IN (BASE)

2. Q

, Q

COMMON (EMITTER)

3. Q

IN (BASE)

4. Q

OUT (COLLECTOR)

5. Q

OUT (COLLECTOR)

COMMON(+)

KRA525T

KRA526T

TSV

EQUIVALENT CIRCUIT (TOP VIEW)

MAXIMUM RATING (Ta=25

Output Voltage

)

SYMBOL

KRA521T~526T

KRA521T

KRA522T

KRA523T

KRA524T

KRA525T

KRA526T

CHARACTERISTIC

RATING

-50

-10, 10

-12, 10

-20, 10

-30, 10

-10, 5

-12, 6

Input Voltage

Output Current

Power Dissipation

Junction Temperature

Storage Temperature Range

* Package mounted on a ceramic board (600

0.8

)

KRA521T~526T

stg

-800

0.9

150

-55 150

Marking

MARK SPEC

TYPE

MARK

KRA521T

KRA522T

KRA523T

KRA524T

KRA525T

KRA526T

Type Name

2002. 7. 9

Revision No : 2

UNIT

Lot No.

1/5

KRA523T Related Products

	KRA523T	KRA526T	KRA524T	KRA525T	KRA522T	KRA521T
Description	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)	EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
Maker	KEC	KEC	KEC	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5
Contacts	5	5	5	5	5	5
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 4.54	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	47	56	56	56	39	33
JESD-30 code	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
Number of components	2	2	2	2	2	2
Number of terminals	5	5	5	5	5	5
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

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