ZXTP2014Z
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BV
CEO
= -140V : R
SAT
= 85m ; I
C
= -3A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 140V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
•
3 amps continuous current
•
Up to 10 amps peak current
•
Very low saturation voltages
SOT89
APPLICATIONS
•
Motor driving
•
Line switching
•
High side switches
•
Subscriber line interface cards (SLIC)
ORDERING INFORMATION
DEVICE
REEL
SIZE
7"
TAPE WIDTH
12mm
embossed
QUANTITY PER
REEL
1,000 units
ZXTP2014ZTA
PINOUT
DEVICE MARKING
955
TOP VIEW
ISSUE 2 - AUGUST 2005
1
SEMICONDUCTORS
ZXTP2014Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T A =25°C
(b)
Linear derating factor
Operating and storage temperature range
P
D
T
j
, T
stg
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
LIMIT
-180
-140
-7
-3
-10
1.5
12
2.1
16.8
-55 to 150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
LIMIT
83
60
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
2
ZXTP2014Z
CHARACTERISTICS
ISSUE 2 - AUGUST 2005
3
SEMICONDUCTORS
ZXTP2014Z
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(SAT)
1
-37
-50
-80
-255
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
100
100
45
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
-910
-800
225
200
100
5
120
33
42
636
300
MIN.
-180
-180
-140
-7.0
TYP.
-200
-200
-160
-8.0
1
1
-20
-0.5
-20
-0.5
-10
-60
-75
-115
-330
-1010
-900
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
I
C
= -100 A
I
C
= -1 A, RB
I
C
= -10mA*
I
E
= -100 A
V
CB
= -150V
V
CB
= -150V, T
amb
=100 C
V
CB
= -150V
V
CB
= -150V, T
amb
=100 C
V
EB
= -6V
I
C
= -0.1A, I
B
= -5mA*
I
C
= -0.5A, I
B
= -50mA*
I
C
= -1A, I
B
= -100mA*
I
C
= -3A, I
B
= -300mA*
I
C
= -3A, I
B
= -300mA*
I
C
= -3A, V
CE
= -5V*
I
C
= -10mA, V
CE
= -5V*
I
C
= -1A, V
CE
= -5V*
I
C
= -3A, V
CE
= -5V*
I
C
= -10A, V
CE
= -5V*
MHz I
C
= -100mA, V
CE
= -10V
f=50MHz
pF
ns
V
CB
= -10V, f= 1MHz*
I
C
= -1A, V
CC
= -50V,
I
B1
= -I
B2
= -100mA
1k
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
4
ZXTP2014Z
TYPICAL CHARACTERISTICS
ISSUE 2 - AUGUST 2005
5
SEMICONDUCTORS
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