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KBPC802G

Description
8 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size118KB,2 Pages
ManufacturerJGD(Jinan Gude Electronic Device)
Websitehttp://www.jgd.com.cn/
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KBPC802G Overview

8 A, SILICON, BRIDGE RECTIFIER DIODE

KBPC802G Parametric

Parameter NameAttribute value
MakerJGD(Jinan Gude Electronic Device)
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current175 A
Number of components4
Maximum operating temperature150 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage200 V
surface mountNO

KBPC802G Related Products

KBPC802G KBPC810G KBPC808G KBPC804G KBPC801G KBPC800G
Description 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Maker JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device) JGD(Jinan Gude Electronic Device)
Reach Compliance Code unknown unknown unknown unknow unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 175 A 175 A 175 A 175 A 175 A 175 A
Number of components 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A 8 A
Maximum repetitive peak reverse voltage 200 V 1000 V 800 V 400 V 100 V 50 V
surface mount NO NO NO NO NO NO
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