2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
| Parameter Name | Attribute value |
| Number of terminals | 4 |
| Number of components | 1 |
| Minimum breakdown voltage | 400 V |
| Maximum average input current | 2 A |
| Processing package description | Plastic, KBP, 4 PIN |
| state | DISCONTINUED |
| packaging shape | Rectangle |
| Package Size | IN-line |
| Terminal form | THROUGH-hole |
| terminal coating | tin lead |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | Bridge, 4 ELEMENTS |
| Shell connection | isolation |
| Diode component materials | silicon |
| Diode type | bridge rectifier diode |
| Phase | 1 |
| Maximum repetitive peak reverse voltage | 400 V |
| Maximum non-repetitive peak forward current | 50 A |
| KBP204G | KBP206G | KBP207G | KBP205G | KBP202G | KBP203G | KBP201G | |
|---|---|---|---|---|---|---|---|
| Description | 2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, SILICON, BRIDGE RECTIFIER DIODE | 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 2 A, SILICON, BRIDGE RECTIFIER DIODE |