KBP106G datasheet, PDF - EEWORLD Datasheet

KBP106G: Description1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size112KB，2 Pages; ManufacturerJGD（Jinan Gude Electronic Device）; Websitehttp://www.jgd.com.cn/

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1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

Parameter Name	Attribute value
Maker	JGD（Jinan Gude Electronic Device）
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	30 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	600 V
surface mount	NO

	KBP106G	KBP100	KBP110G	KBP108G	KBP102G	KBP104G	KBP101G	KBP100G
Description	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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