www.fairchildsemi.com
KA1M0565R/KA1H0565R
Fairchild Power Switch(FPS)
Features
•
•
•
•
•
•
•
•
•
Precision fixed operating frequency
KA1M0565R (67KHz),KA1H0565R (100KHz)
Pulse by pulse over current limiting
Over load protection
Over voltage protection (Min. 23V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Auto restart
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or R
CC
switching converter solution, a Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-220F-4L
1
1. GND 2. DRAIN 3. V
CC
4. FB
Internal Block Diagram
#3 V
CC
32V
5V
Vref
Good
logic
OSC
9V
5µA
#4 FB
2.5R
1R
+
7.5V
−
+
25V
−
Thermal S/D
OVER VOLTAGE S/D
1mA
−
+
S
R
L.E.B
0.1V
S
R
Q
#1 GND
Q
Internal
bias
#2 DRAIN
SFET
Power on reset
Rev.1.0.2
©2001 Fairchild Semiconductor Corporation
KA1M0565R/KA1H0565R
Absolute Maximum Ratings
Parameter
Maximum Drain voltage
(1)
Drain Gate voltage (R
GS
=1MΩ)
Gate-source (GND) voltage
Drain current pulsed
(2)
Symbol
V
D,MAX
V
DGR
V
GS
I
DM
E
AS
I
D
I
D
V
CC,MAX
V
FB
P
D
Derating
T
A
T
STG
Value
650
650
±30
20
230
5.0
3.5
30
−0.3
to V
SD
140
1.11
−25
to +85
−55
to +150
Unit
V
V
V
A
DC
mJ
A
DC
A
DC
V
V
W
W/°C
°C
°C
Single pulsed avalanche energy
(3)
Continuous drain current (T
C
=25°C)
Continuous drain current (T
C
=100°C)
Maximum Supply voltage
Input voltage range
Total power dissipation
Operating ambient temperature
Storage temperature
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=30mH, V
DD
=50V, R
G
= 27Ω, starting Tj=25°C
2
KA1M0565R/KA1H0565R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain source breakdown voltage
Symbol
BV
DSS
Condition
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating,
V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=2.5A
V
DS
=50V, I
D
=2.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=5.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=5.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
Min.
650
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.76
-
1457
130
38.8
-
-
-
-
-
10.3
22.3
Max.
-
50
200
2.2
-
-
-
-
60
150
300
130
56
-
-
nC
nS
pF
Unit
V
µA
µA
Ω
Zero gate voltage drain current
Static drain source on resistance
(note)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate source charge
Gate drain (Miller) charge
Note:
Pulse test: Pulse width
≤
300µS, duty cycle
≤
2%
1
S
= ---
-
R
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
Qg
Qgs
Qgd
S
3
KA1M0565R/KA1H0565R
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter
UVLO SECTION
Start threshold voltage
Stop threshold voltage
OSCILLATOR SECTION
Initial accuracy
Frequency change with temperature
(2)
Maximum duty cycle
FEEDBACK SECTION
Feedback source current
Shutdown Feedback voltage
Shutdown delay current
REFERENCE SECTION
Output voltage
(1)
Temperature Stability
(1)(2)
Peak Current Limit
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
Over voltage protection voltage
TOTAL DEVICE SECTION
Start Up current
Operating supply current
(control part only)
V
CC
zener voltage
I
START
I
OP
V
Z
V
CC
=14V
Ta=25°C
I
CC
=20mA
0.1
6
30
0.3
12
32.5
0.4
18
35
mA
mA
V
T
SD
V
OVP
-
-
140
23
160
25
-
28
°C
V
Vref
Vref/∆T
I
OVER
Ta=25°C
−25°C ≤
Ta
≤
+85°C
Max. inductor current
4.80
-
3.08
5.00
0.3
3.5
5.20
0.6
3.92
V
mV/°C
A
I
FB
V
SD
I
delay
Ta=25°C, 0V
≤
Vfb
≤
3V
-
Ta=25°C, 5V
≤
Vfb
≤
V
SD
0.7
6.9
4.0
0.9
7.5
5.0
1.1
8.1
6.0
mA
V
µA
F
OSC
∆F/∆T
Dmax
KA1M0565R
KA1H0565R
−25°C ≤
Ta
≤
+85°C
KA1M0565R
KA1H0565R
61
90
-
74
64
67
100
±5
77
67
73
110
±10
80
70
kHz
%
%
V
START
V
STOP
-
After turn on
14
9
15
10
16
11
V
V
Symbol
Condition
Min.
Typ.
Max.
Unit
CURRENT LIMIT (SELF-PROTECTION) SECTION
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA1M0565R/KA1H0565R
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig.1 Operating Frequency
1.2
1.15
1.1
1.05
Fosc
1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100 125 150
1.2
1.15
1.1
1.05
IIfb
1
FB
0.95
0.9
0.85
0.8
-25
Fig.2 Feedback Source Current
0
25
50
75
100
125 150
Temperature [°
C
]
Temperature [°
C
]
Figure 1. Operating Frequency
Figure 2. Feedback Source Current
Fig.3 Operating Current
1.2
1.15
1.1
1.05
l
Iop
1
OP
0.95
0.9
0.85
0.8
-25
1.1
1.05
Fig.4 Max Inductor Current
I
Ipeak
1
over
0.95
0.9
0.85
0
25
50
75
100 125 150
0.8
-25
0
25
100 125 150
Temperature [°
C
]
50
75
Temperature [°
C
]
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
1.5
1.3
Fig.5 Start up Current
1.15
1.1
1.05
Fig.6 Start Threshold Voltage
I
ST
Istart
1.1
0.9
0.7
0.5
-25
V
th(H)
1
Vstart
0.95
0.9
0
25
50
75
100 125 150
0.85
-25
0
25
100 125 150
Temperature [°
C
]
50
75
Temperature [°
C
]
Figure 5. Start up Current
Figure 6. Start Threshold Voltage
5
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