BUX84
NPN SILICON POWER TRANSISTOR
40 W at 25°C Case Temperature
2 A Continuous Collector Current
3 A Peak Collector Current
Typical t
f
= 200 ns at 25°C
This series is
obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
C
E
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
SYMBOL
V
CBO
V
CEO
I
CM
T
j
I
C
V
CES
VALUE
800
800
400
2
3
UNIT
V
V
V
A
A
Operating junction temperature range
Storage temperature range
NOTE
Continuous device dissipation at (or below) 25°C case temperature
Peak collector current (see Note 1)
1: This value applies for t
p
≤
2 ms, duty cycle
≤
2%.
E
T
E
L
O
S
B
O
P
tot
T
stg
-65 to +150
-65 to +150
40
°C
°C
W
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BUX84
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
CEO(sus)
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
t
C
ob
NOTES: 2.
3.
4.
5.
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
I
C
=
0.1 A
TEST CONDITIONS
L = 25 mH
V
BE
= 0
V
BE
= 0
I
C
= 0
I
C
= 0.1 A
I
C
= 0.3 A
I
C
=
I
C
=
1A
1A
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
12
f = 0.1 MHz
60
35
0.8
1
1.1
V
V
MHz
pF
T
C
= 125°C
(see Note 2)
MIN
400
0.2
1
1
TYP
MAX
UNIT
V
mA
mA
V
CE
= 800 V
V
CE
= 800 V
V
EB
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
V
CB
=
5V
5V
0.03 A
0.2 A
0.2 A
10 V
20 V
I
C
= 0.2 A
I
E
= 0
Inductive loop switching measurement.
These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
To obtain f
t
the [h
FE
] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h ] = 1.
FE
thermal characteristics
R
θJC
Junction to case thermal resistance
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
t
on
t
s
t
f
t
f
†
Turn on time
Storage time
Fall time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
E
T
E
L
O
S
B
O
PARAMETER
MIN
TEST CONDITIONS
I
B(on)
= 0.2 A
†
TYP
MAX
2.5
UNIT
°C/W
MIN
TYP
0.25
1.8
0.2
MAX
0.5
UNIT
µs
µs
µs
I
C
= 1 A
I
B(off)
= -0.4 A
V
CC
= 250 V
I
C
= 1 A
(see Figures 1 and 2)
I
B(on)
= 0.2 A
I
B(off)
= -0.4 A
V
CC
= 250 V
T
C
= 95°C
0.4
µs
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BUX84
NPN SILICON POWER TRANSISTOR
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
120
Ω
680
µ
F
100
Ω
T
V1
tp
47
Ω
100
µ
F
V cc = 250 V
TUT
15
Ω
V1
100
Ω
BD136
82
Ω
680
µ
F
t
p
= 20
µs
Duty cycle = 1%
V
1
= 15 V, Source Impedance = 50
Ω
A - B = t
d
B - C = t
r
E - F = t
f
D - E = t
s
A - C = t
on
D - F = t
off
E
T
E
L
O
S
B
O
C
90%
90%
E
IC
B
10%
10%
F
0%
90%
D
dI
B
≥
2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BUX84
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCP741AJ
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
10
TCP741AK
I
CES
- Collector Cut-off Current - µA
V
CE
= 5 V
T
C
= 25°C
h
FE
- Typical DC Current Gain
V
CE
= 800 V
V
BE
= 0
1·0
10
0·1
0·01
1·0
0·1
I
C
- Collector Current - A
Figure 3.
E
T
E
L
O
S
B
O
1·0
5·0
0·001
-60
-30
0
30
60
90
120
150
T
C
- Case Temperature - °C
Figure 4.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAP770AB
I
C
- Collector Current - A
1·0
0·1
0.01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BUX84
NPN SILICON POWER TRANSISTOR
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
1·0
50%
TCP741AL
Z
θJC
/ R
θJC
- Normalised Transient Thermal Impedance
20%
10%
0·1
5%
E
T
E
L
O
S
B
O
T
J(max)
- T
C
= P
D(peak)
·
10
-3
duty cycle = t1/t2
Read time at end of t1,
t1
t2
( )
Z
θJC
R
θJC
· R
θJC(max)
0·01
10
-5
10
-4
10
-2
10
-1
10
0
t
1
- Power Pulse Duration - s
Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
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