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M347S6453CTS-C1H

Description
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
Categorystorage    storage   
File Size111KB，11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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M347S6453CTS-C1H Overview

M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM

M347S6453CTS-C1H Parametric

Parameter NameAttribute value
Parts packaging codeDIMM
package instruction,
Contacts168
Reach Compliance Codeunknow
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
memory density4831838208 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX72
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1

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M374S6453CTS
M374S6453CTS SDRAM DIMM
PC133/PC100 Unbuffered DIMM
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
The Samsung M374S6453CTS is a 64M bit x 72 Synchronous
Dynamic RAM high density memory module. The Samsung
M374S6453CTS consists of eighteen CMOS 32M x 8 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy
substrate. Two 0.1uF decoupling capacitors are mounted on the
printed circuit board in parallel for each SDRAM.
The M374S6453CTS is a Dual In-line Memory Module and is
intended for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of
system clock. I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high bandwidth, high
performance memory system applications.
FEATURE
• Performance range
Part No.
M374S6453CTS-L7C/C7C
M374S6453CTS-L7A/C7A
M347S6453CTS-L1H/C1H
M347S6453CTS-L1L/C1L
•
•
•
•
•
Max Freq. (Speed)
133MHz@CL=2
133MHz@CL=3
100MHz@ CL=2
100MHz@ CL=3
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB :
Height (1,375mil),
double sided component
PIN CONFIGURATIONS (Front side/back side)
Pin Front Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
DD
DQ14
DQ15
CB0
CB1
V
SS
NC
NC
V
DD
WE
DQM0
Front
Pin Front Pin
DQ18
DQ19
V
DD
DQ20
NC
*V
REF
CKE1
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
CLK2
NC
*WP
**SDA
**SCL
V
DD
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
DD
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
DD
DQ46
DQ47
CB4
CB5
V
SS
NC
NC
V
DD
CAS
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
CS1
RAS
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
DD
CLK1
A12
V
SS
CKE0
CS3
DQM6
DQM7
*A13
V
DD
NC
NC
CB6
CB7
V
SS
DQ48
DQ49
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Back
DQ50
DQ51
V
DD
DQ52
NC
*V
REF
NC
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
DD
DQ60
DQ61
DQ62
DQ63
V
SS
CLK3
NC
**SA0
**SA1
**SA2
V
DD
29 DQM1 57
58
CS0
30
59
31
DU
60
32
V
SS
61
33
A0
62
34
A2
63
35
A4
64
36
A6
65
37
A8
38 A10/AP 66
67
39
BA1
68
40
V
DD
69
41
V
DD
42 CLK0 70
71
43
V
SS
72
44
DU
73
45
CS2
46 DQM2 74
47 DQM3 75
76
48
DU
77
49
V
DD
78
50
NC
79
51
NC
80
52
CB2
81
53
CB3
82
54
V
SS
55 DQ16 83
56 DQ17 84
PIN NAMES
Pin Name
A0 ~ A12
BA0 ~ BA1
DQ0 ~ DQ63
CB0 ~ 7
CLK0 ~ CLK3
CS0 ~ CS3
RAS
CAS
WE
DQM0 ~ 7
V
DD
V
SS
*V
REF
SDA
SCL
SA0 ~ 2
*WP
DU
NC
Function
Address input (Multiplexed)
Select bank
Data input/output
Check bit (Data-in/data-out)
Clock input
Chip select input
Row address strobe
Column address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Power supply for reference
Serial data I/O
Serial clock
Address in EEPROM
Write protection
Don′t use
No connection
CKE0 ~ CKE1 Clock enable input
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
REV. 0.1 Sept. 2001

M347S6453CTS-C1H Related Products

M347S6453CTS-C1H M347S6453CTS-C1L M347S6453CTS-C7A M374S6453CTS-L7C M374S6453CTS M374S6453CTS-L7A M347S6453CTS-L1L M347S6453CTS-L1H M347S6453CTS-C7C
Description M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
Parts packaging code DIMM DIMM - DIMM - DIMM DIMM DIMM -
Contacts 168 168 - 168 - 168 168 168 -
Reach Compliance Code unknow unknow - unknow - unknow unknow unknow -
ECCN code EAR99 EAR99 - EAR99 - EAR99 EAR99 EAR99 -
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST - DUAL BANK PAGE BURST - DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST -
Maximum access time 6 ns 6 ns - 5.4 ns - 5.4 ns 6 ns 6 ns -
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH -
JESD-30 code R-XDMA-N168 R-XDMA-N168 - R-XDMA-N168 - R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 -
memory density 4831838208 bi 4831838208 bi - 4831838208 bi - 4831838208 bi 4831838208 bi 4831838208 bi -
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE - SYNCHRONOUS DRAM MODULE - SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE -
memory width 72 72 - 72 - 72 72 72 -
Number of functions 1 1 - 1 - 1 1 1 -
Number of ports 1 1 - 1 - 1 1 1 -
Number of terminals 168 168 - 168 - 168 168 168 -
word count 67108864 words 67108864 words - 67108864 words - 67108864 words 67108864 words 67108864 words -
character code 64000000 64000000 - 64000000 - 64000000 64000000 64000000 -
Operating mode SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C - 70 °C - 70 °C 70 °C 70 °C -
organize 64MX72 64MX72 - 64MX72 - 64MX72 64MX72 64MX72 -
Package body material UNSPECIFIED UNSPECIFIED - UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED -
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY - MICROELECTRONIC ASSEMBLY - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY -
Certification status Not Qualified Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified -
self refresh YES YES - YES - YES YES YES -
Maximum supply voltage (Vsup) 3.6 V 3.6 V - 3.6 V - 3.6 V 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 3 V 3 V - 3 V - 3 V 3 V 3 V -
Nominal supply voltage (Vsup) 3.3 V 3.3 V - 3.3 V - 3.3 V 3.3 V 3.3 V -
surface mount NO NO - NO - NO NO NO -
technology CMOS CMOS - CMOS - CMOS CMOS CMOS -
Temperature level COMMERCIAL COMMERCIAL - COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL -
Terminal form NO LEAD NO LEAD - NO LEAD - NO LEAD NO LEAD NO LEAD -
Terminal location DUAL DUAL - DUAL - DUAL DUAL DUAL -

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