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K4H560438E-ZCB0

Description
256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
Categorystorage    storage   
File Size361KB,23 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K4H560438E-ZCB0 Overview

256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

K4H560438E-ZCB0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSAMSUNG
package instructionBGA, BGA60,9X12,40/32
Reach Compliance Codecompliant
Maximum access time0.75 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B60
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width4
Humidity sensitivity level3
Number of terminals60
word count67108864 words
character code64000000
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA60,9X12,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)260
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length2,4,8
Maximum standby current0.003 A
Maximum slew rate0.24 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM
256Mb E-die DDR SDRAM Specification
60 FBGA with Pb-Free
(RoHS compliant)
Revision 1.1
October, 2004
Rev. 1.1 October, 2004

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