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ABS6

Description
0.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size218KB,2 Pages
ManufacturerETC
Download Datasheet Parametric Compare View All

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ABS6 Overview

0.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

ABS6 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage600 V
Maximum average input current0.8000 A
Processing package descriptionGreen, plastic, ABS, 4 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage600 V
Maximum non-repetitive peak forward current30 A
Preliminary
ABS2
THRU
ABS10
Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers
Voltage Range
200 to 1000 Volts
Current
1.0 Ampere
Features
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
High temperature soldering guaranteed:
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
High surge current capability
Thin Mini-Dip
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
ABS2 ABS4
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
On glass-epoxy P.C.B.
On aluminum substrate
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 0.4A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage
Typical Thermal resistance Junction to Lead
On aluminum substrate
On Glass-Epoxy substrate
Operating Temperature Range
Storage Temperature Range
ABS6 ABS8 ABS10
Units
600
420
600
0.8
1.0
30
095
10
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
JL
JA
T
J
T
STG
200
140
200
400
280
400
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
℃/W
25
62.5
80
-55 to +150
-55 to +150
Rev. 1, Sep. 2004

ABS6 Related Products

ABS6 ABS2 ABS10 ABS4 ABS8
Description 0.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

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