2N6352 and 2N6353
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
NPN Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/472
DESCRIPTION
This high speed NPN transistor is military qualified up to the JANTXV level.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
JEDEC registered 2N6352 and 2N6353
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/472
(See
part nomenclature
for all available options)
RoHS compliant versions available (commercial grade only)
TO-213AA
(TO-66)
Package
•
APPLICATIONS / BENEFITS
•
•
•
Military and other high reliability applications
High frequency response
TO-213AA case with isolated terminals
MAXIMUM RATINGS
@ T
C
= +25
o
C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation
Base Current
Collector Current
Notes:
1. Derate linearly 11.4 mW/
o
C for T
A
> +25
o
C
2. Derate linearly 250 mW/
o
C for T
C
> +100
o
C
3. Applies for t
p
≤ 10 ms, duty cycle ≤ 50 percent
Symbol
T
J
and T
STG
R
ӨJC
V
CEO
V
CBO
V
EBO1
V
EBO2
P
T
I
B
I
C
Value
-65 to +200
4.0
80
150
80
150
12
6.0
2.0
25
0.5
5
Unit
o
2N6352
2N6353
2N6352
2N6353
C
C/W
V
V
V
W
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
@ T
A
= +25 C
o (2)
@ T
C
= +100 C
o
(1)
T4-LDS-0315, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 1 of 7
2N6352 and 2N6353
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Industry standard TO-213AA (3-pin TO-66), hermetically sealed
FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating (on commercial grade only).
Solderable per MIL-STD-750 method 2026.
POLARITY: NPN (see
schematic)
MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws
WEIGHT: Approximately 6 grams
See
package dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N6352
(e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Symbol
I
B
I
C
I
E
T
C
V
CB
V
CBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
V
CC
V
CE
V
CEO
V
EB
V
EBO
T4-LDS-0315, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 2 of 7
2N6352 and 2N6353
ELECTRICAL CHARACTERISTICS
@ T
A
= +25
o
C unless otherwise noted
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 25 mA , R
B1E
= 2.2 kΩ, R
B2E
= 100 Ω
Collector-Emitter Breakdown Voltage
I
E
= 12 mA, base 1 open
I
E
= 12 mA, base 2 open
Collector-Emitter Cutoff Current
V
CE
= 80 V, V
EB1
= 2 V, R
B2E
= 100 Ω
V
CE
= 150 V, V
EB1
= 2 V, R
B2E
= 100 Ω
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 1.0 A, V
CE
= 5.0 V, R
B2E
= 1 kΩ
I
C
= 5.0 A, V
CE
= 5.0 V, R
B2E
= 100 Ω
I
C
= 10.0 A, V
CE
= 5.0 V, R
B2E
= 100 Ω
Collector-Emitter Saturation Voltage
I
C
= 5.0 A, I
B
= 5 mA, R
B2E
= 100 Ω
I
C
= 5.0 A, I
B
= 10 mA, R
B2E
= 100 Ω
Base-Emitter Voltage Non-saturated
V
CE
= 5.0 V, I
C
= 5.0 A, R
B2E
= 100 Ω
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 A, V
CE
= 10.0 V, f = 10 MHz, R
B2E
= 100 Ω
Output Capacitance
V
CB
= 10 V, 100 kHz ≤ f ≤ 1 MHz, base 2 open
Symbol
Min.
Max.
Unit
2N6352
2N6353
V
(BR)CEO
V
(BR)EBO
80
150
6.0
12
1.0
V
V
2N6352
2N6353
I
CEX
µA
2N6352
2N6353
2N6352
2N6353
2N6352
2N6353
h FE
2,000
1,000
2,000
1,000
400
200
10,000
10,000
V
CE(sat)
1.5
2.5
2.5
V
V
BE
V
|hfe|
Cobo
5
25
120
pF
T4-LDS-0315, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 3 of 7
2N6352 and 2N6353
ELECTRICAL CHARACTERISTICS
@ T
C
= 25
o
C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 V, I
C
= 5.0 A
Turn-Off Time
V
CC
= 30 V, I
C
= 5.0 A
t
on
t
off
0.5
1.2
µs
µs
SAFE OPERATING AREA (See
Figures 1 and 2
and
MIL-STD-750,Test Method 3053)
DC Tests
T
C
= +100 ºC, t ≥ 1 second, 1 Cycle; t
r
+ t
f
= 10
µs,
R
B2E
= 100 Ω
Test 1
V
CE
= 5.0 V, I
C
= 5.0 A
Test 2
V
CE
= 10 V, I
C
= 2.5 A
Test 3
V
CE
= 80 V, I
C
= 95 mA (2N6352)
Test 4
V
CE
= 150 V, I
C
= 35 mA (2N6353)
T4-LDS-0315, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 4 of 7
2N6352 and 2N6353
SAFE OPERATING AREA
I
C
= Collector Current (Amperes)
V
CE
– Collector to Emitter Voltage (Volts)
FIGURE 1
Maximum Safe Operating Area
T4-LDS-0315, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 5 of 7
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