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JANTXV1N6491

Description
5.6 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size120KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV1N6491 Overview

5.6 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

JANTXV1N6491 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-41
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY, METALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusQualified
GuidelineMIL-19500
Nominal reference voltage5.6 V
surface mountNO
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current45 mA
Base Number Matches1
• AVAILABLE IN
JAN, JANTX, JANTXV,
AND
JANS
PER MIL-PRF-19500/406
• 1.5 WATT ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6485
THRU
1N6491
AND
1N4460
AND
1N4461
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0 V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
0.060/0.085
1.52/2.16
POLARITY
BAND
(CATHODE)
0.125/0.160
3.18/4.06
0.800
20.32
0.028/0.032
0.71/0.81
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
ZENER
TEST
DYNAMIC
KNEE
TEST
REVERSE TEST
MAXIMUM VZ
(REG)
MAXIMUM
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
VZ
SURGE
±5%
IZT
(MAX.)
(MAX.)
IZK
(MAX.)
VR
IZM
VZ
ZZT@IZT
ZZK@IZT
IR@VR
µ
A
VOLTS
mA
OHMS
OHMS
mA
VOLTS
MA
VOLTS
AMPS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
76.0
69.0
64.0
58.0
53.0
49.0
45.0
40.0
37.0
10
10
9
9
8
7
5
4
2.5
400
400
400
400
500
500
600
200
200
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
50
35
5.0
4.0
1.0
0.5
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.72
4.08
433
397
366
332
304
280
255
230
210
.90
.80
.75
.70
.60
.50
.40
.35
.30
4.2
3.9
3.6
3.3
3.0
2.7
2.5
2.3
2.1
TYPE
FIGURE 1
1N6485
1N6486
1N6487
1N6488
1N6489
1N6490
1N6491
1N4460
1N4461
DESIGN DATA
CASE:
Hermetically sealed, Glass “A”
Body per MIL-PRF- 19500/406
D-5A
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJL): 42
°C/W maximum at L = .375
THERMAL IMPEDANCE: (Z
OJX): 4.5
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
NOTE:
Zener voltage is measured with the device junction in thermal equilibrium at an
ambient temperature of 25
°C ± 3°C.
MOUNTING POSITION:
Any
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
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