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30KPA33A-HR

Description
ESD Suppressors / TVS Diodes 33Vso 36VAC 517A UNI-DIRECT
CategoryDiscrete semiconductor    diode   
File Size975KB,7 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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30KPA33A-HR Overview

ESD Suppressors / TVS Diodes 33Vso 36VAC 517A UNI-DIRECT

30KPA33A-HR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
Maximum breakdown voltage40.59 V
Minimum breakdown voltage36.9 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
GuidelineIEC-61000-4-2; IEC-61000-4-4
Maximum repetitive peak reverse voltage33 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
TVS Diodes
Axial Leaded – 30000W > 30KPA-HR series
30KPA-HR Series
Descriptios
Uni-directional
RoHS
Pb
e3
The 30KPA-HR High Reliability Series is designed
specifically to protect sensitive electronic equipment from
voltage transients induced by lightning and other transient
voltage events.
Bi-directional
Features
• 30000W peak pulse
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Glass passivated chip
junction in P600 package
• Fast response time:
typically less than 1.0ps
from 0 Volts to BV min
• Excellent clamping
capability
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Low incremental surge
resistance
Notes:
1.
For RTCA/DO-160G testing results, please see tables in the last section of this
datasheet
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Test Waveform (Fig.2)
(Note 1)
Steady State Power Dissipation on
Infinite Heat Sink at T
L
=75ºC
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
Only (Note 2)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
T
J
, T
STG
R
uJL
R
uJA
Value
30000
8.0
400
-55 to 175
8.0
40
Unit
W
W
A
°C
°C/W
°C/W
• Typical I
R
less than 2μA
when V
BR
min>73V
• High temperature
soldering guaranteed:
260C/10 seconds / 0.375”
,
(9.5mm) lead length, 5
lbs., (2.3kg) tension
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• Plastic package is
flammability rated V-0 per
Underwriters Laboratories
• Lead-free matte tin plated
package
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is Pb-
free and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
Applications
TVS devices are ideal for the protection of I/O interfaces,
V
CC
bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Functional Diagram
Bi-directional
Cathode
Uni-directional
Anode
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/10/16
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