®
Z01 Series
1A TRIAC
S
STANDARD
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
1
600 to 800
3 to 25
Unit
A
V
mA
G
A2
A1
A2
A1
DESCRIPTION
The Z01 series is suitable for general purpose AC
switching applications. They can be found in
applications
such
as
home
appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
A2
A1
G A2
TO-92
(Z01xxA)
SOT-223
(Z01xxN)
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
SOT-223
TO-92
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
Ttab = 90°C
1
TI = 50°C
t = 20 ms
t = 16.7 ms
8
8.5
0.35
Tj = 125°C
Tj = 125°C
Tj = 125°C
20
1
0.1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
A
Value
Unit
A
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
tp = 10 ms
F = 120 Hz
tp = 20 µs
July 2003 - Ed: 5
1/7
Z01 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
03
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
(dV/dt)c (2)
V
D
= V
DRM
I
T
= 50 mA
I
G
= 1.2 I
GT
I - III - IV
II
V
D
= 67 %V
DRM
gate open Tj = 110°C
(dI/dt)c = 0.44 A/ms
Tj = 110°C
MIN.
MIN.
R
L
= 3.3 kΩ Tj = 125°C
R
L
= 30
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
7
7
15
10
0.5
10
10
20
20
1
3
5
Z01xx
07
5
7
1.3
0.2
10
15
25
50
2
25
25
50
100
5
V/µs
V/µs
09
10
10
10
25
25
mA
V
V
mA
mA
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 1.4 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.6
0.95
400
5
0.5
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-t)
R
th(j-l)
R
th(j-a)
Junction to tab (AC)
Junction to lead (AC)
Junction to ambient
S = 5 cm
²
Parameter
SOT-223
TO-92
SOT-223
TO-92
S = Copper surface under tab
Value
25
60
60
150
Unit
°C/W
°C/W
2/7
Z01 Series
PRODUCT SELECTOR
Part Number
600 V
Z0103MA
Z0103MN
Z0103SA
Z0103SN
Z0103NA
Z0103NN
Z0107MA
Z0107MN
Z0107SA
Z0107SN
Z0107NA
Z0107NN
Z0109MA
Z0109MN
Z0109SA
Z0109SN
Z0109NA
Z0109NN
Z0110MA
Z0110MN
Z0110SA
Z0110SN
Z0110NA
Z0110NN
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Voltage
700 V
800 V
3 mA
3 mA
3 mA
3 mA
3 mA
3 mA
5 mA
5 mA
5 mA
5 mA
5 mA
5 mA
10 mA
10 mA
10 mA
10 mA
10 mA
10 mA
25 mA
25 mA
25 mA
25 mA
25 mA
25 mA
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
Sensitivity
Type
Package
ORDERING INFORMATION
Z
TRIAC
SERIES
CURRENT: 1A
01 03
M A
VOLTAGE:
M: 600V
S: 700V
N: 800V
Blank
1AA2
PACKING MODE:
1AA2: TO-92 bulk (preferred)
2AL2: TO-92 ammopack
5AA4: SOT-223 Tape & reel
PACKAGE:
A: TO-92
N: SOT-223
SENSITIVITY:
03: 3mA
07: 5mA
09: 10mA
10: 25mA
3/7
Z01 Series
OTHER INFORMATION
Part Number
Z01xxyA 1AA2
Z01xxyA 2AL2
Z0103yN 5AA4
Z0107yN 5AA4
Z0109yN 5AA4
Z0110yN 5AA4
Note:
xx = sensitivity, y = voltage
Marking
Z01xxyA
Z01xxyA
Z3y
Z7y
Z9y
Z0y
Weight
0.2 g
0.2 g
0.12 g
0.12 g
0.12 g
0.12 g
Base
quantity
2500
2000
1000
1000
1000
1000
Packing
mode
Bulk
Ammopack
Tape & reel
Tape & reel
Tape & reel
Tape & reel
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P(W)
1.50
1.25
1.00
0.75
0.50
0.25
Fig. 2-1:
RMS on-state current versus ambient
temperature (full cycle).
IT(RMS)(A)
1.2
1.0
0.8
0.6
0.4
0.2
TO-92
(Rth(j-a=Rth(j-l))
SOT-223
(Rth(j-a)=Rth(j-t))
IT(RMS)(A)
0.0
0
25
Tl or Ttab (°C)
50
75
100
125
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 2-2:
RMS on-state current versus ambient
temperature (full cycle).
IT(RMS)(A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
TO-92
Rth(j-a)=150°C/W
SOT-223
(Rth(j-a)=60°C/W)
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1.00
Z01xxxA
0.10
Z01xxxN
Tamb(°C)
50
75
100
125
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
4/7
Z01 Series
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
1.5
IH & IL
IGT
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM(A)
9
8
7
6
5
4
3
2
1
0
t=20ms
Non repetitive
Tj initial=25°C
One cycle
1.0
0.5
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Repetitive
Tamb=25°C
Number of cycles
1
10
100
1000
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
100.0
dI/dt limitation:
20A/µs
ITSM
Fig. 7:
values).
On-state
characteristics
(maximum
ITM(A)
10.0
Tj initial=25°C
10.0
Tj=Tj max.
1.0
1.0
I²t
Tj=25°C
tp (ms)
0.1
0.01
0.10
1.00
10.00
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Tj max.
Vto= 0.95 V
Rd= 420 mΩ
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
Z0103
Z0107
Z0109
Z0110
1
100.0
(dV/dt)c (V/µs)
Tj (°C)
0
25
50
75
100
125
1.0
10.0
0
5/7
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