EEWORLDEEWORLDEEWORLD

Part Number

Search

1.4KESD16E3TR

Description
Trans Voltage Suppressor Diode, 1400W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC SELAD, GLASS, DO-35, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size173KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

1.4KESD16E3TR Overview

Trans Voltage Suppressor Diode, 1400W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC SELAD, GLASS, DO-35, 2 PIN

1.4KESD16E3TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW CAPACITANCE
Minimum breakdown voltage17.8 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AH
JESD-30 codeO-LALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation1400 W
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage16 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1.4KESD5.0 thru 1.4KESD170CA, e3
AXIAL-LEAD TVS
SCOTTSDALE DIVISION
DESCRIPTION
These small axial-leaded TVS devices feature the ability to clamp
dangerous high voltage short-term transients such as produced by directed
or radiated electrostatic discharge phenomena before entering sensitive
component regions of a circuit design. They are small economical transient
voltage suppressors targeted primarily for short-term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as illustrated in Figure #1.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-35
(DO-204AH)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Excellent protection in clamping direct ESD level
transients in excess of 15,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients* of 1400 Watts per MIL-
STD-750, Method 1020 (approx. 150 ns exponential
wave, or one microsecond transients up to 400 watts.
See Figure #1 and #2 for overall transient Peak Pulse
Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5 V to 170 V
Hermetic DO-35 Package. Also available in surface
mount DO-213AA MELF package (see separate data
sheet)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Low inherent capacitance for high-frequency
applications (See Figure #4)
Flexible axial-lead mounting terminals
Bidirectional features available by adding a “C” or
“CA” suffix
MAXIMUM RATINGS
400 Watts for One Microsecond Square Wave or
1400 watts per ESD Wave form of MIL-STD-750,
method 1020.
See Surge Rating curve in Figures #1 and 2.
o
o
Operating and storage temperature –65 C to 175 C
THERMAL RESISTANCE: Less than 250
o
C/W
junction to lead at 0.375 inches from body.
DC power dissipation 500 mW at T
L
= 75
o
C at 3/8
inch (10 mm) lead length from body.
Derate at 2.3 W/
o
C above 25
o
C for P
PP
(1μs) and at
o
o
5 mW/ C above 100 C for dc power.
o
Forward Surge Current 50 amps for 1μs at T
L
= 25 C
(rise time > 100 ns).
MECHANICAL AND PACKAGING
CASE: Hermetically sealed axial-lead glass DO-35
(DO-204AH) package
FINISH: Tin-lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Banded end is cathode
WEIGHT: 0.2 grams (typical)
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
1.4KESD5.0 thru
1.4KESD170A, e3
Copyright
©
2006
3-29-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Please recommend a PCI development board for FPGA without bridge chip
FPGA directly connected to PCI, without PLX interface chip, the price is best to be cheap, Taobao is too expensive, high-end chips Spartan6 and Spartan3a are fine, altera's are also OK, the price is p...
lidonglei1 FPGA/CPLD
Help regarding video capture card
Our company is currently using a PCI video capture card, which uses SA7111A for AD conversion = EP2C8T144 to temporarily store and control transfer data = PLX9054. A FIFO is written in the FPGA chip. ...
yup1983 Embedded System
Introduction to the Powerpad function of the sharing chip
The chip powerpad is used to dissipate heat for the chip. Most chips have a powerpad. However, there are a few things to note: The powerpad must be connected to GND and fully soldered to the GND on th...
qwqwqw2088 Analogue and Mixed Signal
Configuration and precautions of COFF in Buck LED driver chip with COFT control mode
[i=s]This post was last edited by qwqwqw2088 on 2022-8-24 13:12[/i]LED driver chips can be divided into analog dimming and PWM dimming according to the dimming method.Analog dimming is relatively simp...
qwqwqw2088 TI Technology Forum
RT-Thread MIPS branch serialization: MIPS32 exceptions and interrupts
This article talks about MIPS exceptions and interrupts. Many people may not understand the meaning of exceptions and interrupts :An exception is when an abnormal situation or special request occurs d...
ffxz Embedded System
Android Bluetooth Low Energy BLE Development Notes
Basic concepts and issues 1. Bluetooth design paradigm? When a mobile phone scans and connects to a low-power Bluetooth device, the mobile phone and the Bluetooth device form a client-server architect...
Jacktang Wireless Connectivity

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 511  2330  2479  1627  143  11  47  50  33  3 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号