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APTGF25DSK120T3

Description
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-25
CategoryDiscrete semiconductor    The transistor   
File Size316KB,6 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet Parametric View All

APTGF25DSK120T3 Overview

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-25

APTGF25DSK120T3 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-XUFM-X25
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)40 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X25
Number of components2
Number of terminals25
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)386 ns
Nominal on time (ton)110 ns
Base Number Matches1
APTGF25DSK120T3
Dual Buck chopper
NPT IGBT Power Module
13 14
V
CES
= 1200V
I
C
= 25A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Q1
18
19
Q2
11
10
22
23
7
8
CR2
CR1
29
15
30
31
R1
32
16
Features
Non Punch Through (NPT) Fast IGBT
®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single buck of twice the current capability.
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2
3
4
7
8
10 11 12
14
13
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
A
V
W
50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF25DSK120T3 – Rev 0
January, 2005
Parameter
Collector - Emitter Breakdown Voltage
Max ratings
1200
40
25
100
±20
208
Unit
V
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