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TT2140LS

Description
COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR)
CategoryDiscrete semiconductor    The transistor   
File Size37KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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TT2140LS Overview

COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR)

TT2140LS Parametric

Parameter NameAttribute value
MakerSANYO
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)6 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Ordering number : ENN7215A
TT2140LS
TT2140LS
Features
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
1500
800
6
6
15
2.0
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
Symbol
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
VF
tf
Conditions
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=3.15A, IB=0.63A
IC=3.15A, IB=0.63A
VCE=5V, IC=0.5A
VCE=5V, IC=3.5A
IEC=6A
IC=2A, IB1=0.4A, IB2=-
-0.8A
10
5
8
2
0.3
V
µs
800
40
130
3
1.5
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005KC TS IM TB-00000887 / 53003 TS IM TA-100066 No.7215-1/4
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