JAN2N3867S datasheet, PDF - EEWORLD Datasheet

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JAN2N3867S: Description3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD; CategoryDiscrete semiconductor The transistor; File Size50KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD

JAN2N3867S Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	BCY
package instruction	TO-39, 3 PIN
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Qualified
Guideline	MIL-19500/350
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	600 ns
Maximum opening time (tons)	100 ns

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TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/350

Devices

2N3867

2N3867S

2N3868

2N3868S

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current -- Continuous

Total Power Dissipation

@ T

= 25

(1)

@ T

= 25

(2)

Operating & Storage Temperature Range

Symbol

CEO

CBO

EBO

OP,

STG

Symbol

2N3867

2N3867S

2N3868

2N3868S

Unit

Vdc

Adc

Unit

C/W

4.0

3.0

1.0

-55 to +200

Max.

17.5

TO-5*

2N3867, 2N3868

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

1) Derate linearly 5.71 mW/

C for T

> +25

2) Derate linearly 57.1 mW/

C for T

> +25

TO-39*

(TO-205AD)

2N3867S, 2N3868S

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T

= 25

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

= 100

µAdc

Collector-Emitter Breakdown Voltage

= 20 mAdc

Emitter-Base Breakdown Voltage

= 100

µAdc

Collector-Emitter Cutoff Current

= 2.0 Vdc, V

= 40 Vdc

= 2.0 Vdc, V

= 60 Vdc

Collector-Base Cutoff Current

= 40 Vdc

= 60 Vdc

Emitter-Base Cutoff Current

= 4 Vdc

2N3867, S

2N3868, S

2N3867, S

2N3868, S

(BR)

CBO

4.0

1.0

100

Vdc

(BR)

CEO

(BR)

EBO

Vdc

µAdc

2N3867, S

2N3868, S

2N3867, S

2N3868, S

CEX

CBO

EBO

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JAN2N3867S Related Products

	JAN2N3867S	JANTXV2N3868	JANTXV2N3868S	JANTXV2N3867S	JANTX2N3867S	JAN2N3868S	JAN2N3867
Description	3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN	3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	TO-39, 3 PIN	TO-5, 3 PIN	TO-39, 3 PIN	TO-39, 3 PIN	TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3	TO-5, 3 PIN
Reach Compliance Code	unknow	unknown	unknown	unknow	unknow	compli	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	40 V	60 V	60 V	40 V	40 V	60 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20	20	20	20
JEDEC-95 code	TO-205AD	TO-5	TO-205AD	TO-205AD	TO-205AD	TO-205AD	TO-5
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Qualified	Qualified	Not Qualified	Qualified	Qualified	Qualified	Not Qualified
Guideline	MIL-19500/350	MIL-19500/350	MIL-19500/350	MIL-19500/350	MIL-19500/350	MIL-19500/350	MIL-19500/350
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	600 ns	600 ns	600 ns	600 ns	600 ns	600 ns	600 ns
Maximum opening time (tons)	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns	100 ns
Parts packaging code	BCY	-	BCY	BCY	BCY	BCY	TO-5
Contacts	2	-	2	2	2	2	3
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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