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JAN2N3867

Description
Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size50KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JAN2N3867 Overview

Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN

JAN2N3867 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439170657
Parts packaging codeTO-5
package instructionTO-5, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
GuidelineMIL-19500/350
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)600 ns
Maximum opening time (tons)100 ns
TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices
2N3867
2N3867S
2N3868
2N3868S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
OP,
T
STG
Symbol
R
θ
JC
2N3867
2N3867S
40
40
2N3868
2N3868S
60
60
Unit
Vdc
Vdc
Vdc
Adc
W
W
0
C
Unit
C/W
4.0
3.0
1.0
10
-55 to +200
Max.
17.5
TO-5*
2N3867, 2N3868
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
0
TO-39*
(TO-205AD)
2N3867S, 2N3868S
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
µAdc
Collector-Emitter Breakdown Voltage
I
C
= 20 mAdc
Emitter-Base Breakdown Voltage
I
E
= 100
µAdc
Collector-Emitter Cutoff Current
V
EB
= 2.0 Vdc, V
CE
= 40 Vdc
V
EB
= 2.0 Vdc, V
CE
= 60 Vdc
Collector-Base Cutoff Current
V
CB
= 40 Vdc
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 4 Vdc
2N3867, S
2N3868, S
2N3867, S
2N3868, S
V
(BR)
CBO
40
60
40
60
4.0
1.0
1.0
100
100
Vdc
V
(BR)
CEO
V
(BR)
EBO
Vdc
Vdc
µAdc
2N3867, S
2N3868, S
2N3867, S
2N3868, S
I
CEX
I
CBO
I
EBO
µAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JAN2N3867 Related Products

JAN2N3867 JANTXV2N3868 JANTXV2N3868S JANTXV2N3867S JANTX2N3867S JAN2N3868S JAN2N3867S
Description Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction TO-5, 3 PIN TO-5, 3 PIN TO-39, 3 PIN TO-39, 3 PIN TO-39, 3 PIN CYLINDRICAL, O-MBCY-W3 TO-39, 3 PIN
Reach Compliance Code unknown unknown unknown unknow unknow compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 40 V 60 V 60 V 40 V 40 V 60 V 40 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20 20 20 20
JEDEC-95 code TO-5 TO-5 TO-205AD TO-205AD TO-205AD TO-205AD TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Qualified Not Qualified Qualified Qualified Qualified Qualified
Guideline MIL-19500/350 MIL-19500/350 MIL-19500/350 MIL-19500/350 MIL-19500/350 MIL-19500/350 MIL-19500/350
surface mount NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 600 ns 600 ns 600 ns 600 ns 600 ns 600 ns 600 ns
Maximum opening time (tons) 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
Parts packaging code TO-5 - BCY BCY BCY BCY BCY
Contacts 3 - 2 2 2 2 2
Peak Reflow Temperature (Celsius) - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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