AH226-CHIP1 datasheet, PDF - EEWORLD Datasheet

AH226-CHIP1: DescriptionVariable Capacitance Diode, Very High Frequency to KA Band, 2.8pF C(T), 15V, Gallium Arsenide, Hyperabrupt; CategoryDiscrete semiconductor diode; File Size179KB，4 Pages; ManufacturerThales Group

Download Datasheet Parametric View All

AH226-CHIP1 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 2.8pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Parameter Name	Attribute value
Maker	Thales Group
package instruction	O-XEMW-F2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	15 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Nominal diode capacitance	2.8 pF
Diode component materials	GALLIUM ARSENIDE
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO KA BAND
JESD-30 code	O-XEMW-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	MICROWAVE
Certification status	Not Qualified
minimum quality factor	2000
Maximum reverse current	0.1 µA
Reverse test voltage	10 V
surface mount	YES
Terminal form	FLAT
Terminal location	END
Varactor Diode Classification	HYPERABRUPT
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components