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M464S1654BT1-L1H

Description
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Categorystorage    storage   
File Size58KB,5 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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M464S1654BT1-L1H Overview

16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

M464S1654BT1-L1H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeDIMM
package instructionDIMM, DIMM144,32
Contacts144
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-XZMA-N144
memory density1073741824 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM144,32
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.008 A
Maximum slew rate0.84 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch0.8 mm
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
16
→O1
15
→O2
14
→O3
13
→O4
½
OUTPUT
12
→O5
11
→O6
10
→O7
9
GND
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
V
S
8
FEATURES
High breakdown voltage (BV
CEO
50V)
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with CMOS IC output of 6-16V or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
Package type 16P2N-A
CIRCUIT DIAGRAM
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
V
S
20K
INPUT
3K
7.2K
1.5K
3K
OUTPUT
FUNCTION
The M63800FP has seven circuits, which are made of input
inverters and current-sourcing outputs. The outputs are
made of PNP transistors and NPN Darlington transistors.
The PNP transistor base current is constant. A spike-killer
clamping diode is provided between each output pin and
GND. V
S
(pin 8) and GND (pin 9) are used commonly among
the eight circuits.
The input has resistance of 3kΩ, and a maximum of 10V can
be applied. The output current is 500mA maximum. Supply
voltage V
S
is 50V maximum.
The M63800FP is enclosed in a molded small flat package,
enabling space-saving design.
GND
The seven circuits share the V
S
and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
S
V
I
I
O
I
F
V
R
P
d
T
opr
T
stg
#
#
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Conditions
Ratings
–0.5 ~ +50
50
–0.5 ~ +10
–500
–500
50
Unit
V
V
V
mA
mA
V
W
°C
°C
Current per circuit output, H
Ta = 25°C, when mounted on board
1.00
–20 ~ +75
–55 ~ +125
# : Unused I/O pins must be connected to GND.
Aug. 1999

M464S1654BT1-L1H Related Products

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Description 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Is it Rohs certified? incompatible - - - incompatible incompatible incompatible
Maker SAMSUNG - - - SAMSUNG SAMSUNG SAMSUNG
Parts packaging code DIMM - - - DIMM DIMM DIMM
package instruction DIMM, DIMM144,32 - - - DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32
Contacts 144 - - - 144 144 144
Reach Compliance Code unknow - - - unknow unknow unknow
ECCN code EAR99 - - - EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST - - - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns - - - 6 ns 6 ns 6 ns
Other features AUTO/SELF REFRESH - - - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 100 MHz - - - 100 MHz 100 MHz 100 MHz
I/O type COMMON - - - COMMON COMMON COMMON
JESD-30 code R-XZMA-N144 - - - R-XZMA-N144 R-XZMA-N144 R-XZMA-N144
memory density 1073741824 bi - - - 1073741824 bi 1073741824 bi 1073741824 bi
Memory IC Type SYNCHRONOUS DRAM MODULE - - - SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 - - - 64 64 64
Humidity sensitivity level 1 - - - 1 1 1
Number of functions 1 - - - 1 1 1
Number of ports 1 - - - 1 1 1
Number of terminals 144 - - - 144 144 144
word count 16777216 words - - - 16777216 words 16777216 words 16777216 words
character code 16000000 - - - 16000000 16000000 16000000
Operating mode SYNCHRONOUS - - - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C - - - 70 °C 70 °C 70 °C
organize 16MX64 - - - 16MX64 16MX64 16MX64
Output characteristics 3-STATE - - - 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED - - - UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM - - - DIMM DIMM DIMM
Encapsulate equivalent code DIMM144,32 - - - DIMM144,32 DIMM144,32 DIMM144,32
Package shape RECTANGULAR - - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY - - - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 225 - - - 225 225 225
power supply 3.3 V - - - 3.3 V 3.3 V 3.3 V
Certification status Not Qualified - - - Not Qualified Not Qualified Not Qualified
refresh cycle 8192 - - - 8192 8192 8192
self refresh YES - - - YES YES YES
Maximum standby current 0.008 A - - - 0.008 A 0.008 A 0.008 A
Maximum slew rate 0.84 mA - - - 0.84 mA 0.84 mA 0.84 mA
Maximum supply voltage (Vsup) 3.6 V - - - 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - - - 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V - - - 3.3 V 3.3 V 3.3 V
surface mount NO - - - NO NO NO
technology CMOS - - - CMOS CMOS CMOS
Temperature level COMMERCIAL - - - COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD - - - NO LEAD NO LEAD NO LEAD
Terminal pitch 0.8 mm - - - 0.8 mm 0.8 mm 0.8 mm
Terminal location ZIG-ZAG - - - ZIG-ZAG ZIG-ZAG ZIG-ZAG
Maximum time at peak reflow temperature NOT SPECIFIED - - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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