MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
16
→O1
15
→O2
14
→O3
13
→O4
½
OUTPUT
12
→O5
11
→O6
10
→O7
9
GND
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
V
S
8
FEATURES
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with CMOS IC output of 6-16V or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
Package type 16P2N-A
CIRCUIT DIAGRAM
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
V
S
20K
INPUT
3K
7.2K
1.5K
3K
OUTPUT
FUNCTION
The M63800FP has seven circuits, which are made of input
inverters and current-sourcing outputs. The outputs are
made of PNP transistors and NPN Darlington transistors.
The PNP transistor base current is constant. A spike-killer
clamping diode is provided between each output pin and
GND. V
S
(pin 8) and GND (pin 9) are used commonly among
the eight circuits.
The input has resistance of 3kΩ, and a maximum of 10V can
be applied. The output current is 500mA maximum. Supply
voltage V
S
is 50V maximum.
The M63800FP is enclosed in a molded small flat package,
enabling space-saving design.
GND
The seven circuits share the V
S
and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
S
V
I
I
O
I
F
V
R
P
d
T
opr
T
stg
#
#
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Parameter
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Conditions
Ratings
–0.5 ~ +50
50
–0.5 ~ +10
–500
–500
50
Unit
V
V
V
mA
mA
V
W
°C
°C
Current per circuit output, H
Ta = 25°C, when mounted on board
1.00
–20 ~ +75
–55 ~ +125
# : Unused I/O pins must be connected to GND.
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
V
S
Supply voltage
Output current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
min
0
Limits
typ
—
—
—
5
—
max
50
–350
Unit
V
I
O
Duty Cycle
no more than 7%
Duty Cycle
no more than 40%
0
0
2.4
0
mA
–100
10
0.2
V
V
V
IH
V
IL
ELECTRICAL CHARACTERISTICS
Symbol
I
S (leak) #
V
CE (sat)
I
I
I
S
V
F
I
R
#
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Parameter
Supply leak current
Collector-emitter saturation voltage
Input current
Supply current
V
S
= 50V, V
I
= 0.2V
Test conditions
Limits
min
—
—
—
—
—
—
—
—
typ
+
—
1.6
1.45
0.6
2.9
5.6
–1.2
—
max
100
2.4
2.0
1.0
5.0
15.0
–2.4
100
Unit
µA
V
mA
mA
V
µA
V
S
= 10V, V
I
= 2.4V, I
O
= –350mA
V
S
= 10V, V
I
= 2.4V, I
O
= –100mA
V
I
= 3V
V
I
= 10V
V
S
= 50V, V
I
= 3V (all input)
Clamping diode forward voltage I
F
= –350mA
Clamping diode reverse current V
R
= 50V
+
: The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
min
—
—
Limits
typ
100
4800
max
—
—
Unit
ns
ns
NOTE 1 TEST CIRCUIT
INPUT
V
S
Measured device
TIMING DIAGRAM
50%
INPUT
50%
PG
50Ω
R
L
C
L
OUTPUT
50%
OUTPUT
ton
toff
50%
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
I
= 0 to 2.4V
(2) Input-output conditions : R
L
= 30Ω, V
S
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Output Current Characteristics
–500
V
S
= 10V
V
I
= 2.4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Thermal Derating Factor Characteristics
2.0
Power dissipation Pd (W)
1.5
Output current I
O
(mA)
0
25
50
75
100
–400
–300
1.0
–200
0.5
–100
0
0
0
0.5
1.0
1.5
2.0
2.5
Ambient temperature Ta (°C)
Output saturation voltage V
CE
(sat) (V)
Duty-Cycle-Output Current Characteristics
–500
Duty-Cycle-Output Current Characteristics
–500
Output current I
O
(mA)
Output current I
O
(mA)
–400
–400
–300
•The output current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
–300
–200
•The output current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
–200
–100
80
100
–100
0
0
20
40
60
0
•Ta = 75°C
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Grounded Emitter Transfer Characteristics
–500
Forward bias current I
F
(mA)
V
S
= 20V
V
S
-V
O
= 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Clamping Diode Characteristics
500
Output current I
O
(mA)
–400
400
Ta = 75°C
Ta = 25°C
Ta = –20°C
–300
300
–200
200
–100
100
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.5
1.0
1.5
2.0
Input voltage V
I
(V)
Forward bias voltage V
F
(V)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics
1.0
V
S
= 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Input Characteristics
5
0.8
4
Input current I
I
(mA)
0.6
Input current I
I
(mA)
V
S
= 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
3
0.4
2
0.2
1
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Input voltage V
I
(V)
Input voltage V
I
(V)
Aug. 1999
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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