KST42/43
KST42/43
High Voltage Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector Base Voltage
: KST42
: KST43
V
CEO
Collector-Emitter Voltage
: KST42
: KST43
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
300
200
6
500
350
150
357
V
V
V
mA
mW
°C
°C/W
300
200
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Emitter Breakdown Voltage
: KST42
: KST43
* Collector -Emitter Breakdown Voltage
: KST42
: KST43
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
=100µA, I
E
=0
Min.
300
200
I
C
=1mA, I
B
=0
300
200
I
E
=100µA, I
C
=0
V
CB
=200V, I
E
=0
V
CB
=5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CB
=20V, I
E
=0
f=1MHz
V
CE
=20V, I
C
=10mA
f=100MHz
50
25
40
40
0.5
0.9
3
4
V
V
pF
pF
MHz
6
0.1
0.1
V
V
V
µA
µA
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KST42
: KST43
f
T
Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST42/43
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
V
CE
= 10V
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
1
10
100
0.01
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
E
= 0
f = 1MHz
120
100
C
cb
[pF], CAPACITANCE
V
CE
= 20V
80
10
60
40
20
1
0.1
0
1
10
100
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
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Obsolete
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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