1N4446
1N4446
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
4.0
-65 to +200
175
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
500
300
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
C
T
t
rr
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Test Conditions
I
R
= 100
µA
I
F
= 20 mA
V
R
= 20 V
V
R
= 20 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
I
rr
= 1.0 mA
Min
100
Max
1.0
25
50
4
4
Units
V
V
nA
µA
pF
ns
2003
Fairchild Semiconductor Corporation
1N4446, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. I5
Microcontroller MCU
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