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RB411VA-50

Description
0.5 A, 50 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size130KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RB411VA-50 Overview

0.5 A, 50 V, SILICON, SIGNAL DIODE

RB411VA-50 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
RB411VA-50
Diodes
Schottky barrier diode
RB411VA-50
Applications
General rectification
External dimensions
(Unit : mm)
0.17±0.1
  
0.05
1.3±0.05
Land size figure
(Unit : mm)
1.1
1.9±0.1
2.5±0.2
TUMD2
Construction
Silicon epitaxial planar
0.8±0.05
Structure
ROHM : TUMD2
    0.1
dot (year week factory) + day
0.6±0.2
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
1.75±0.1
φ1.55±0.1
      0
0.25±0.05
3.5±0.05
8.0±0.2
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
2.75
2.8±0.05
0.9±0.08
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
(60Hz・1cyc)
Junction temperature
Storage temperature
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
V
F
1
Forawrd voltage
V
F
2
I
R
Reverse current
Capacitance between terminals
Ct
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
50
20
0.5
3
125
-40 to +125
Unit
V
V
A
A
Min.
-
-
-
-
Typ.
-
-
-
20
Max.
0.50
0.30
30
-
Unit
V
V
µA
pF
I
F
=500mA
I
F
=10mA
V
R
=10V
V
R
=10V , f=1MHz
0.8 0.5
Features
1) Small mold type. (TUMD2)
2) High reliability.
2.0
Conditions
1/3

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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