CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C223N3-H
Issued Date : 2004.03.03
Revised Date :
Page No. : 1/4
BTN8050N3
Description
The BTN8050N3 is designed for general purpose low frequency amplifier applications.
Features
•
High collector current , I
C
= 0.8A
•
Low V
CE
(sat), V
CE
(sat)=0.15V (typical), at I
C
/ I
B
= 400mA / 20mA
•
Complementary to BTP8550N3
.
Symbol
BTN8050N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
30
20
5
800
1.5
(Note)
225
150
-55~+150
Unit
V
V
V
mA
A
W
°C
°C
BTN8050N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
V
BE(on)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
30
20
5
-
-
-
-
-
100
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
150
15
Max.
-
-
-
100
100
0.3
0.4
1
500
-
-
-
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Spec. No. : C223N3-H
Issued Date : 2004.03.03
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=400mA, I
B
=20mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=150mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=800mA
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380
µ
s, Duty Cycle≤2%
Classification Of h
FE
1
Rank
Range
C
100~200
D
150~300
E
250~500
BTN8050N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE = 5V
Spec. No. : C223N3-H
Issued Date : 2004.03.03
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
Current Gain---HFE
100
VCE(SAT) @ IC=20IB
100
VCE = 2V
VCE = 1V
10
VCE(SAT) @ IC=10IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
On Voltage vs Collector Current
1000
On Voltage---(mV)
VBE(ON) @ VCE=1V
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
Ambient Temperature---TA(℃)
200
BTN8050N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C223N3-H
Issued Date : 2004.03.03
Revised Date :
Page No. : 4/4
A
L
Marking:
3
B
1
2
S
TE
D9
V
G
C
D
K
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
H
J
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN8050N3
CYStek Product Specification
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