PRELIMINARY
CM1426
LCD and Camera EMI Filter Array with ESD Protection
Features
•
•
•
•
•
•
•
•
•
Four, six and eight channels of EMI filtering with
integrated ESD protection
0.5mm pitch, 10-bump, 1.96mm x 1.33mm foot-
print Chip Scale Package (CM1426-04)
0.5mm pitch, 15-bump, 2.96mm x 1.33mm foot-
print Chip Scale Package (CM1426-06)
0.5mm pitch, 20-bump, 3.96mm x 1.33mm foot-
print Chip Scale Package (CM1426-08)
Pi-style EMI filters in a capacitor-resistor-capacitor
(C-R-C) network
±8kV
ESD protection on each channel
(IEC 61000-4-2 Level 4, contact discharge)
±15kV
ESD protection on each channel (HBM)
Greater than 20dB attenuation (typical) at 1 GHz
Chip Scale Package features extremely low
lead inductance for optimum filter and ESD
performance
Optiguard
™
coated for improved reliability at
assembly
Lead-free version available
Product Description
The CM1426 is a family of pi-style EMI filter arrays with
ESD protection, which integrates four, six and eight fil-
ters (C-R-C) in a Chip Scale Package with 0.50mm
pad pitch. The CM1426 has component values of
8.5pF-100Ω-8.5pF per channel. The CM1426 has a
cut-off frequency of 230MHz and can be used in appli-
cations where the data rates are as high as 92Mbps.
The parts include avalanche-type ESD diodes on every
pin, which provide a very high level of protection for
sensitive electronic components that may be subjected
to electrostatic discharge (ESD). The ESD protection
diodes safely dissipate ESD strikes of
±8kV,
well
beyond the maximum requirement of the IEC61000-4-
2 international standard. Using the MIL-STD-883
(Method 3015) specification for Human Body Model
(HBM) ESD, the pins are protected for contact dis-
charges at greater than
±15kV.
These devices are particularly well-suited for portable
electronics (e.g. wireless handsets, PDAs, notebook
computers) because of their small package and easy-
to-use pin assignments. In particular, the CM1426 is
ideal for EMI filtering and protecting data and control
lines for the I/O data ports, LCD display and camera
interface in mobile handsets.
The CM1426 incorporates
Optiguard
™
which results in
improved reliability at assembly. The CM1426 is avail-
able in a space-saving, low-profile Chip Scale Package
with optional lead-free finishing.
•
•
Applications
•
•
•
•
•
•
LCD and Camera data lines in mobile handsets
I/O port protection for mobile handsets, notebook
computers, PDAs etc.
EMI filtering for data ports in cell phones, PDAs or
notebook computers.
Wireless handsets
Handheld PCs/PDAs
LCD and camera modules
Electrical Schematic
100Ω
FILTER+ESDn*
(Pins A1-An)
FILTER+ESDn*
(Pins C1-Cn)
8.5pF
8.5pF
GND*
(Pins B1-Bm)
* See Package/Pinout Diagram
for expanded pin information.
© 2005 California Micro Devices Corp. All rights reserved.
08/30/05
1 of 4, 6 or 8 EMI/RFI + ESD Channels
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
1
PRELIMINARY
CM1426
Ordering Information
PART NUMBERING INFORMATION
Standard Finish
Bumps
10
15
20
Package
CSP
CSP
CSP
Ordering Part
Number
1
CM1426-04CS
CM1426-06CS
CM1426-08CS
Part Marking
N264
N266
N268
Lead-free Finish
2
Ordering Part
Number
1
CM1426-04CP
CM1426-06CP
CM1426-08CP
Part Marking
N264
N266
N268
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Note 2: Lead-free devices are specified by using a "+" character for the top side orientation mark.
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
500
UNITS
°C
mW
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE1)
SYMBOL
R
C
TOTAL
C
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Total Channel Capacitance
Capacitance C1
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883, Method
3015
b) Contact Discharge per IEC 61000-4-2 Level 4
At 2.5VDC Reverse
Bias, 1MHz, 30mVAC
At 2.5VDC Reverse
Bias, 1MHz, 30mVAC
I
DIODE
=10μA
V
DIODE
= 3.3V
I
LOAD
= 10mA
I
LOAD
= -10mA
Notes 2 and 3
±15
±8
kV
kV
5.6
-1.5
CONDITIONS
MIN
80
13.6
6.8
TYP
100
17
8.5
6.0
0.1
6.8
-0.8
1
9.0
-0.4
MAX
120
20.4
10.2
UNITS
Ω
pF
pF
V
μA
V
V
V
ESD
© 2005 California Micro Devices Corp. All rights reserved.
08/30/05
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
3
Embedded System
京公网安备 11010802033920号
EEWORLD
