CYStech Electronics Corp.
General Purpose PNP Digital Transistors (Built-in Resistor)
Spec. No. : C274N3
Issued Date : 2002.06.01
Revised Date : 2002. 11.02
Page No. : 1/3
DTA144TN3
Features
•
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
•
Only the on/off conditions need to be set for operation, making device design easy
.
•
Complements the DTC144TN3
Equivalent Circuit
DTA144TN3
SOT-23
R1=47
kΩ
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-50
-50
-5
-100
200
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
DTA144TN3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
(Ta=25°C)
Parameter
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
-50
-50
-5
-
-
-
100
32.9
-
-
-
-
-
-
-0.1
-
47
250
-
-
-
-0.5
-0.5
-0.3
V
V
V
uA
uA
V
Spec. No. : C274N3
Issued Date : 2002.06.01
Revised Date : 2002. 11.02
Page No. : 2/3
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-50V
VEB=-4V
IC=-5mA, IB=-0.5mA
600
-
VCE=-5V, IC=-1mA
61.1 kΩ -
-
MHz VCE=-10V, IE=-5mA, f=100MHz*
* Transition frequency of the device
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
1000
Saturation Voltage vs Collector Current
Current Gain---
HFE
100
100
HFE@VCE=5V
10
0.1
1
10
100
Collector Current--- IC(mA)
VCE(SAT)@IC=10IB
10
1
10
Collector Current ---IC(mA)
100
PD - Ta
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
DTA144TN3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A
L
3
B
1
2
S
Spec. No. : C274N3
Issued Date : 2002.06.01
Revised Date : 2002. 11.02
Page No. : 3/3
Marking:
6T
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
H
K
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Dimension and tolerance based on our Spec. dated Feb. 18,2002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYCtek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTA144TN3
CYStek Product Specification
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