DMS2085LSD
P-CHANNEL ENHANCEMENT MODE MOSFET
WITH INTEGRATED SCHOTTKY DIODE
Product Summary
ADVANCE INFORMATION
NEW PRODUCT
V
(BR)DSS
-20V
V
R
20V
MOSFET
R
DS(on) max
85mΩ @ V
GS
= -10V
125mΩ @ V
GS
= -4.5V
SCHOTTKY DIODE
V
F max
400mV @ I
F
= 0.5A
470mV @ I
F
= 1.0A
I
D
-3.3A
-2.8A
I
O
1.0A
Features and Benefits
•
•
•
•
•
•
•
Low Input Capacitance
MOSFET with Low R
DS(ON)
– Minimize Conduction Losses
Schottky Diode with Low Forward Voltage Drop
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (approximate)
Applications
•
•
•
DC-DC Converters
Power Management Functions
Backlighting
D
A
A
S
G
K
K
D
D
A
G
S
Q1 P-Channel MOSFET
Top View
Top View
Internal Schematic
K
D1 Schottky Diode
Ordering Information
(Note 4)
Part Number
DMS2085LSD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
S2085LD
YY WW
1
4
1
S2085LD
YY WW
4
= Manufacturer’s Marking
S2085LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
1 of 7
www.diodes.com
August 2014
© Diodes Incorporated
DMS2085LSD
Maximum Ratings – P-CHANNEL MOSFET – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 5mH
Avalanche Energy (Notes 7) L = 5mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
I
D
I
D
I
S
I
DM
I
AR
E
AR
Value
-20
±20
-3.3
-2.7
-4.3
-3.4
-1.5
-11.2
-5
50
Units
V
V
A
A
A
A
A
mJ
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Maximum Ratings – SCHOTTKY – D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current (Note 7, t<10s)
Peak Repetitive Forward Current (Note 7, t<10s)
Non-Repetitive Peak Forward Surge Current (Note 7, t<10s)
Single half sine-wave superimposed on rated load
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
Value
20
1
2
20
Unit
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
θ
JA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.1
1.8
108
65
1.8
2.3
78
50
22
-55 to +150
°C
Units
W
°C/W
W
°C/W
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
2 of 7
www.diodes.com
August 2014
© Diodes Incorporated
DMS2085LSD
Electrical Characteristics P-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-20
⎯
⎯
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
-1.5
70
100
-0.8
353
49
41
6.2
3.7
7.8
1.1
1.3
3.3
3.0
14
6.8
33
46
Max
⎯
-1
±100
-2.2
85
125
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nS
nC
I
S
= -3.05A, dI/dt = 100A/μs
I
S
= -3.05A, dI/dt = 100A/μs
nS
V
DS
= -15V,R
L
= 15Ω
V
GS
= -10V, R
G
= 6Ω
nC
V
DS
= -15V, I
D
= -3A
Ω
pF
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -3.05A
V
GS
= -4.5V, I
D
= -1.50A
V
GS
= 0V, I
S
= -1.0A
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
15.0
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.5V
10
9
8
I
D
, DRAIN CURRENT (A)
V
DS
= -5.0V
12.0
I
D
, DRAIN CURRENT (A)
V
GS
= -3.0V
7
6
5
4
3
2
1
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
9.0
6.0
V
GS
= -2.5V
3.0
V
GS
= -1.8V
V
GS
= -2.0V
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
0
0
0.5
1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
5
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
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August 2014
© Diodes Incorporated
DMS2085LSD
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.15
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
6
7
8
9
I
D
, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
10
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 125
°
C
V
GS
= -4.5V
0.12
V
GS
= -4.5V
T
A
= 150
°
C
ADVANCE INFORMATION
NEW PRODUCT
0.09
T
A
= 85
°
C
0.06
V
GS
= -10V
0.03
0
0
3
6
9
12
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
15
1.6
V
GS
= -4.5V
I
D
= -5A
0.15
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.12
1.2
V
GS
= -10V
I
D
= -5A
V
GS
= -4.5V
I
D
= -5A
0.09
V
GS
= -10V
I
D
= -5A
0.06
0.8
0.03
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.8
1.6
10
9
8
I
S
, SOURCE CURRENT (A)
-I
D
= 1mA
1.4
1.2
1
0.8
0.6
0.4
0.2
7
6
5
4
3
2
1
0
0
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
-I
D
= 250µA
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
1.2
1.5
0.3
0.6
0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
4 of 7
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August 2014
© Diodes Incorporated
DMS2085LSD
1000
10
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
V
GS
, GATE-SOURCE VOLTAGE (V)
8
ADVANCE INFORMATION
NEW PRODUCT
6
V
DS
= -15V
I
D
= -3A
100
C
oss
C
rss
4
2
f = 1MHz
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 ypical Junction Capacitance
R
DS(on)
Limited
30
0
0
1
2
3
4
5
6
7
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
8
100
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
0.1
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µs
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMS2085LSD
Document number: DS36926 Rev. 2 - 2
5 of 7
www.diodes.com
August 2014
© Diodes Incorporated
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