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SB260E-G

Description
Schottky Diodes & Rectifiers Low VF ESD 2A 60V Schottky Rectifier
CategoryDiscrete semiconductor    diode   
File Size445KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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SB260E-G Overview

Schottky Diodes & Rectifiers Low VF ESD 2A 60V Schottky Rectifier

SB260E-G Parametric

Parameter NameAttribute value
MakerComchip Technology
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
Low VF/ESD Leaded Schottky Barrier Rectifiers
SB220E-G thru SB2100E-G
Voltage Range:
20
to 100 V
Current:
2.0
A
"-G" : RoHS Device
FEATURES
• Low drop down voltage
• 2.0A operation at T
A
=75°C with no thermal runaway
• For use in low voltage, high frequency invertors free
wheeling and polarity protection
• Silicon epitaxial planar chips
• Electrostatic discharge (ESD) test under IEC61000-4-2:
standard: >15KV (air) & 8KV (contact)
• Lead-free part, meet RoHS requirements
DO-15
1.0(25.4) Min.
.140(3.6)
.104(2.6)
.300(7.6)
.230(5.8)
MECHANICAL DATA
• Case: Molded plastic body DO-15
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: 0.015 ounces, 0.4 grams
1.0(25.4) Min.
.034(0.86)
.028(0.71)
Unit :inch(mm)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Symbols
220E 240E 245E 250E 260E 280E 2100E
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375” (9.5mm) lead length at T
A
=75°C,
See Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod) T
L
=110°C
V
RRM
V
RMS
V
DC
20
14
2
0
40
28
40
45
30
45
50
35
50
60
42
60
80
56
80
100
70
100
Volts
Volts
Volts
I
AV
2.0
Amps
I
FSM
V
F
50
0.50
0.70
0.5
20
170
Amps
0.85
Volts
Maximum Forward Voltage at 2.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
T
A
=
25°C
T
A
=100
°C
I
R
C
J
R
θJA
R
θJL
T
J
T
STG
10
mA
pF
50.0
25.0
-65 ~ +125
-65 ~ +150
-65 ~ +150
°C/W
°C
°C
Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted 0. 375” (9.5mm ) lead length
MDS0906003A
Page 1

SB260E-G Related Products

SB260E-G SB240E-G SB2100E-G
Description Schottky Diodes & Rectifiers Low VF ESD 2A 60V Schottky Rectifier Schottky Diodes & Rectifiers Low VF ESD 2A 40V Schottky Rectifier Schottky Diodes & Rectifiers Low VF ESD 2A 100V Schottky Rectifier
Reach Compliance Code compliant compliant compliant
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
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