2N6300 datasheet, PDF - EEWORLD Datasheet

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2N6300: DescriptionDarlington Transistors . .; CategoryDiscrete semiconductor The transistor; File Size403KB，3 Pages; ManufacturerCentral Semiconductor

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Darlington Transistors . .

2N6300 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-66
package instruction	TO-66, 2 PIN
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	75 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Base Number Matches	1

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2N6298 2N6299

2N6300 2N6301

PNP

NPN

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

DARLINGTON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6298 series

devices are complementary silicon Darlington power

transistors manufactured by the epitaxial base process

designed for high gain amplifier and medium speed

switching applications.

MARKING: FULL PART NUMBER

TO-66 CASE

2N6298

2N6300

60

5.0

8.0

16

120

75

-65 to +200

2.33

2N6299

2N6301

80

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICEV

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

hfe

fT

Cob

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ, Tstg

Θ

JC

UNITS

V

A

mA

W

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCE=Rated VCEO, VBE=1.5V

VCE=Rated VCEO, VBE=1.5V, TC=150°C

VCE=½Rated VCEO

VEB=5.0V

IC=100mA (2N6298, 2N6300)

IC=100mA (2N6299, 2N6301)

IC=4.0A, IB=16mA

IC=8.0A, IB=80mA

VCE=3.0V, IC=4.0A

VCE=3.0V, IC=8.0A

VCE=3.0V, IC=3.0A, f=1.0kHz

VCE=3.0V, IC=3.0A, f=1.0MHz

VCB=10V, IE=0, f=100kHz (NPN types)

VCB=10V, IE=0, f=100kHz (PNP types)

750

100

300

4.0

60

80

MAX

0.5

5.0

0.5

2.0

UNITS

mA

V

2.0

3.0

4.0

2.8

18K

V

MHz

200

300

pF

R3 (2-September 2014)

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