HSMBJ5913 thru HSMBJ5956
SILICON 3.0 Watt ZENER DIODE
SCOTTSDALE DIVISION
DESCRIPTION
The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides
voltage regulation in a selection from 3.3 to 200 volts with different tolerances
as identified by suffix letter on the part number. It is equivalent to the JEDEC
registered 1N5913 thru 1N5956B with identical electrical characteristics
except it is rated at 3.0 W instead of 1.5 W with the lower thermal resistance
features of this surface mount packaging. These plastic encapsulated Zeners
have a moisture classification of Level 1 with no dry pack required and are
also available in military equivalent screening levels by adding a prefix
identifier as further described in the Features section. Microsemi also offers
numerous other Zener products to meet higher and lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
PACKAGE
WWW .
Microsemi
.C
OM
DO-214AA
(see package notes)
FEATURES
•
•
•
•
•
•
Surface mount equivalent to 1N5913 to
1N5956B
Ideal for high-density and low-profile mounting
Zener voltage available 3.3V to 200V
Standard voltage tolerances are plus/minus 5%
with B suffix and 10 % with A suffix identification
Tight tolerances available in plus or minus 2% or
1% with C or D suffix respectively
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers.
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Wide selection from 3.3 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
High specified maximum current (I
ZM
) when
adequately heat sinking
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
MAXIMUM RATINGS
•
•
•
Power dissipation at 25
º
C: 3.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
º
C to
+150
º
C
Thermal Resistance: 15
º
C/W junction to lead,
or 80
º
C/W junction to ambient when mounted on
FR4 PC board (1oz Cu) with recommended
footprint (see last page)
Steady-State Power: 3 watts at T
L
< 105
o
C, or
º
1.56 watts at T
A
= 25 C when mounted on FR4
PC board with recommended footprint (also see
Figure1)
Forward voltage @200 mA: 1.2 volts
(maximum)
Solder Temperatures: 260 C for 10 s
(maximum)
º
MECHANICAL AND PACKAGING
•
•
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: C-bend (modified J-bend) leads, tin-
lead plated solderable per MIL-STD-750, method
2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Includes part number without prefix
(e.g. 5913B, 5926C, 5951D, etc.)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape 750 per 7 inch reel or 2500 per 13
inch reel (add “TR” suffix to part number)
WEIGHT: 0.1 grams
See package dimensions on last page
•
•
•
•
HSMBJ5913-595
6B
•
•
•
•
Copyright
©
2005
3-22-2005 REV F
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
HSMBJ5913 thru HSMBJ5956
SILICON 3.0 Watt ZENER DIODE
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ T
L
= 30
o
C
JEDEC
TYPE
NUMBER
HSMBJ5913
HSMBJ5914
HSMBJ5915
HSMBJ5916
HSMBJ5917
HSMBJ5918
HSMBJ5919
HSMBJ5920
HSMBJ5921
HSMBJ5922
HSMBJ5923
HSMBJ5924
HSMBJ5925
HSMBJ5926
HSMBJ5927
HSMBJ5928
HSMBJ5929
HSMBJ5930
HSMBJ5931
HSMBJ5932
HSMBJ5933
HSMBJ5934
HSMBJ5935
HSMBJ5936
HSMBJ5937
HSMBJ5938
HSMBJ5939
HSMBJ5940
HSMBJ5941
HSMBJ5942
HSMBJ5943
HSMBJ5944
HSMBJ5945
HSMBJ5946
HSMBJ5947
HSMBJ5948
HSMBJ5949
HSMBJ5950
HSMBJ5951
HSMBJ5952
HSMBJ5953
HSMBJ5954
HSMBJ5955
HSMBJ5956
ZENER
VOLTAGE
V
Z
Volts
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
TEST
CURRENT
I
ZT
mA
113.6
104.2
96.1
87.2
79.8
73.5
66.9
60.5
55.1
50
45.7
41.2
37.5
34.1
31.2
28.8
25
23.4
20.8
18.7
17
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8.0
7.3
6.7
6.0
5.5
5.0
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
DYNAMIC
IMPEDANCE
Z
ZT
Ohms
10
9.0
7.5
6.0
5.0
4.0
2.0
2.0
2.5
3.0
3.5
4.0
4.5
5.5
6.5
7.0
9.0
10
12
14
17.5
19
23
28
33
38
45
53
67
70
86
100
120
140
160
200
250
300
380
450
600
700
900
1200
KNEE
CURRENT
I
ZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
KNEE
IMPEDANCE
Z
ZK
Ohms
500
500
500
500
500
350
250
200
200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
REVERSE
CURRENT
I
R
(MAX.)
μAdc
100
75
25
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
REVERSE
VOLTAGE
V
R
Volts
1.0
1.0
1.0
1.0
1.5
2.0
3.0
4.0
5.2
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.2
56
62.2
69.2
76
83.6
91.2
98.8
114
121.6
136.8
152
MAX. DC
CURRENT
I
ZM
mA
454
416
384
348
319
294
267
241
220
200
182
164
150
136
125
115
100
93
83
75
68
62
55
50
45
41
38
34
31
29
26
24
22
20
18
16
15
13
12
11
10
9.0
8.0
7.0
HSMBJ5913-595
6B
NOTES:
1. No suffix indicates a +/-20% tolerance on nominal V
Z
. Suffix A denotes a +/-10% tolerance, B denotes a
+/-5% tolerance, C denotes a 2% tolerance, and D denotes a +/-1% tolerance.
2. Zener voltage (V
Z
) is measured at T
L
= 30
o
C and 90 seconds after application of dc current.
3. The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms
value equal to 10% of the dc zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
Copyright
©
2005
3-22-2005 REV F
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
HSMBJ5913 thru HSMBJ5956
SILICON 3.0 Watt ZENER DIODE
SCOTTSDALE DIVISION
GRAPHS
WWW .
Microsemi
.C
OM
Pd, Maximum Power Dissipation (mW)
T
L
T
A
on FR4
PC board
Temperature ºC
Typical Maximum Power in Watts
Square Wave Pulse Width (Non-Repetitive) in Milliseconds
FIGURE 1
POWER DERATING CURVE
FIGURE 2
TRANSIENT SURGE CAPABILITY
PACKAGE DIMENSIONS & PAD LAYOUT
Typical Capacitance in Picofarads
A
B
C
INCHES
.260
.085
.110
mm
6.60
2.16
2.79
DIM
A
B
C
D
E
F
G
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
.052
.103
1.32
2.62
.160
.180
4.06
4.57
.130
.155
3.30
3.94
.205
.220
5.21
5.59
.075
.130
1.91
3.30
.030
.060
.76
1.52
.006
.016
.15
.41
HSMBJ5913-595
6B
NOTE: Dimension E exceeds the
JEDEC outline in height as shown
Zener Voltage
V
Z
FIGURE 3 -
CAPACITANCE vs.
V
Z
CURVE
Copyright
©
2005
3-22-2005 REV F
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Renesas Electronics MCUs
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