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TISP7015L1, TISP7038L1
TRIPLE ELEMENT THYRISTOR OVERVOLTAGE PROTECTORS
*R
NT
TISP70xxL1 (VLV) OvervoltageProtectors
Three Terminal Very Low Voltage (VLV) Protection
Ion-Implanted Breakdown Region
Device
‘7015L1
‘7038L1
V
DRM
V
8
28
V
(BO)
V
15
38
D Package (Top View)
T1
NC
NC
T2
1
2
3
4
8
7
6
5
NC
NC
G
NC
MD7XAJA
Protection for Signal, Data and Control Lines
- ISDN
- T1/E1
- Ethernet
- RS232 & RS485
Low Capacitance
- ‘7015L1 ....................................................................... 24 pF typ.
- ‘7038L1 ....................................................................... 17 pF typ.
Rated for International Surge Wave Shapes
Voltage
Waveshape
2/10
1.2/50
10/700
10/1000
Standard
GR-1089-CORE
IEC 61000-4-5
TIA/EIA-IS-968
ITU-T K.20/45/21
GR-1089-CORE
I
PPSM
A
200
100
50
NC - No internal connection
Device Symbol
T1
T2
SD7XAD
G
30
IEC 61000-4-2 Immunity Ratings
Contact .................................................................................. 6 kV
Air .......................................................................................... 8 kV
............................................ UL Recognized Components
Description
The TISP70xxL1 series are 3-point overvoltage protectors designed for protecting against metallic (transverse mode) and simultaneous
longitudinal (common mode) impulses. Each terminal pair has the same voltage limiting values and surge current capability.
These devices are designed to limit overvoltages between signal, data and control port conductors, connected to terminals T1 and T2, and a
protective ground, G. Each terminal pair has a symmetrical voltage-triggered bidirectional thyristor characteristic (Figure 1). Overvoltages are
initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage
on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device
holding current will normally be higher than the available short circuit d.c. system current, causing the protector to switch off as the diverted
current subsides.
How To Order
Device
TISP7015L1
TISP7038L1
Package
D (8-pin, Small-outline)
D (8-pin, Small-outline)
Carrier
R (Embossed Tape Reeled)
R (Embossed Tape Reeled)
Order As
TISP7015L1DR-S
TISP7038L1DR-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
The TISP70xxL1 is guaranteed to withstand the listed international ESD (ElectroStatic Discharge), and lightning impulses in both polarities.
Terminals marked NC do not have any internal connections and may be left floating or tied to some circuit point. The TISP7038L1 is a
functional replacement for the TPN3021.
Absolute Maximum Ratings, TJ = 25
°
C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, also VDE0878)
8/20 (IEC 61000-4-5, Figure 12 generator, 1.2/50 voltage wave shape)
10/160 (TIA/EIA-IS-968 (formally FCC Part 68), 10/160 voltage wave shape)
5/310 (ITU-T k.20/21, 10/700 voltage wave shape, also IEC 61000-4-5 and VDE0433)
10/560 (TIA/EIA-IS-968 (formally FCC Part 68), 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Note 1)
16.7 ms (60 Hz) full sine wave
20 ms (50 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2.0 s 50 Hz/60 Hz a.c.
Junction temperature
Storage temperature range
T
J
T
stg
I
TSM
9
8
3
1.5
-40 to +150
-65 to +150
°C
°C
A
I
PPSM
200
100
100
75
50
40
30
A
TISP7015L1
TISP7038L1
Symbol
V
DRM
Value
±
8
±
28
Unit
V
NOTES: 1. Initially the TISP70xxL1 must be in thermal equilibrium at the specified TA. The surge may be repeated after the TISP70xxL1
returns to its initial conditions.
2. These non-repetitive rated currents are peak values of either polarity.
EMC Immunity Test Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
Level 3 open-circuit voltage, IEC 61000-4-2, 2001-4, ESD generator, also ITU-T K.20
contact discharge
air discharge
V
O/C
6
8
kV
Symbol
Value
Unit
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted)
Parameter
I
DRM
V
(BO)
I
(BO)
I
H
Repetitive peak off-
state current
Breakover voltage
Breakover current
Holding current
V
D
=
±V
DRM
dv/dt =
±250
V/ms, RSOURCE = 300
Ω
dv/dt =
±250
V/ms, RSOURCE = 300
Ω
IT =
±5
A, di/dt =
±30
mA/ms
±30
TISP7015L1
TISP7038L1
Test Conditions
Min
Typ
Max
±4
±15
±38
±300
Unit
µA
V
mA
mA
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
Electrical Characteristics, TJ = 25
°
C (Unless Otherwise Noted) (Continued)
Parameter
C
KA
Off-state capacitance
Test Conditions
f = 1 MHz, Vd = 1 V rms, VD = 0 (see Note 3)
TISP7015L1
TISP7038L1
Min
Typ
24
17
Max
Unit
pF
NOTE 3: Value for any terminal pair, three-terminal guarded measurement with zero voltage bias on the unmeasured terminal.
Thermal Characteristics
Parameter
R
ΘJA
Junction to free air thermal resistance
Test Conditions
Ptot = 0.8 W, TA = 25
°C,
5 cm2, FR4 PCB
Min
Typ
Max
170
Unit
°C/W
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
DRM
-v
V
DRM
I
DRM
I
H
V
D
I
D
I
D
V
D
V
DRM
+v
I
(BO)
I
(BO)
V
(BO)
I
TSM
Quadrant III
Switching
Characteristic
I
PPSM
-i
PM7AC
Figure 1. Voltage-Current Characteristic for any Terminal Pair
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10000
V
D
=
±50
V
TC7LVC
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
1.10
TC7LVE
1000
Normalized Breakover Voltage
I
D
- Off-State Current - nA
'7038L1
1.05
100
1.00
'7015L1
10
'7015L1
'7038L1
1
0
50
100
T
A
- Ambient Temperature -
°C
150
0.95
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
150
Figure 2.
Figure 3.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
tw = 100
µs
TA = 25
°C
TC7LVB
2
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC7LVD
10
Normalized Holding Current
1.5
I
T
- On-State Current - A
1
0.9
0.8
0.7
0.6
0.5
1
0.1
1
2
3
4 5 6 7 8 910
V
T
- On-State Voltage - V
20
0.4
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°
C
150
Figure 4.
Figure 5.
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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