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BC807-25215

Description
Bipolar Transistors - BJT PNP45V 500mA
Categorysemiconductor    Discrete semiconductor   
File Size224KB,20 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC807-25215 Overview

Bipolar Transistors - BJT PNP45V 500mA

BC807-25215 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.5 A
Gain Bandwidth Product fT80 MHz
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max160 at 100 mA at 1 V
Height1 mm
Length3 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width1.4 mm
DC Collector/Base Gain hfe Min160 at 100 mA at 1 V, 40 at 500 mA at 1 V
Minimum Operating Temperature- 65 C
Pd - Power Dissipation250 mW
Factory Pack Quantity3000
Unit Weight0.000282 oz
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1.
Product overview
Package
NXP
BC807
BC807W
BC327
[1]
[1]
Type number
NPN complement
JEITA
-
SC-70
SC-43A
BC817
BC817W
BC337
SOT23
SOT323
SOT54 (TO-92)
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
DC current gain
BC807; BC807W; BC327
BC807-16; BC807-16W; BC327-16
BC807-25; BC807-25W; BC327-25
BC807-40; BC807-40W; BC327-40
[1]
Pulse test: t
p
300
μs; δ ≤
0.02.
Conditions
open base;
I
C
= 10 mA
Min
-
-
-
Typ
-
-
-
Max
−45
Unit
V
−500
mA
−1
A
I
C
=
−100
mA;
V
CE
=
−1
V
[1]
100
100
160
250
-
-
-
-
600
250
400
600

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Description Bipolar Transistors - BJT PNP45V 500mA Bipolar Transistors - BJT TRANS GP TAPE-7 Bipolar Transistors - BJT TRANS GP TAPE-13 Bipolar Transistors - BJT TRANS GP TAPE-13 Bipolar Transistors - BJT TRANS GP TAPE-7 Bipolar Transistors - BJT TRANS GP TAPE-11
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
Manufacturer NXP NXP NXP NXP NXP NXP
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS Details Details Details Details Details Details
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-323-3 SOT-323-3
Transistor Polarity PNP PNP PNP PNP PNP PNP
Configuration Single Single Single Single Single Single
Collector- Emitter Voltage VCEO Max 45 V 45 V 45 V 45 V - 45 V 45 V
Collector- Base Voltage VCBO 50 V 50 V 50 V 50 V 50 V 50 V
Emitter- Base Voltage VEBO 5 V 5 V 5 V 5 V - 5 V 5 V
Maximum DC Collector Current 0.5 A 0.5 A 0.5 A 0.5 A - 1 A 0.5 A
Gain Bandwidth Product fT 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C
Height 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
Length 3 mm 3 mm 3 mm 3 mm 2.2 mm 2.2 mm
Width 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.35 mm 1.35 mm
Minimum Operating Temperature - 65 C - 65 C - 65 C - 65 C - 65 C - 65 C
Pd - Power Dissipation 250 mW 250 mW 250 mW 250 mW 250 mW 200 mW
Factory Pack Quantity 3000 3000 10000 10000 3000 10000
Unit Weight 0.000282 oz 0.000282 oz 0.000282 oz 0.000282 oz 0.000176 oz 0.000176 oz
DC Current Gain hFE Max 160 at 100 mA at 1 V - 160 at 100 mA at 1 V 100 at 100 mA at 1 V 100 at 100 mA at 1 V 100 at 100 mA at 1 V
Packaging Reel Reel Reel Reel Reel Reel
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