M74HCT132
QUAD 2-INPUT SCHMITT NAND GATE
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 19ns (TYP.) at V
CC
= 4.5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY :
V
H
= 0.7V (TYP) at V
cc
= 4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 132
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
DESCRIPTION
The M74HCT132 is an high speed CMOS QUAD
2-INPUT SCHMITT NAND GATE fabricated with
silicon gate C
2
MOS technology.
Pin configuration and function are the same as
those of the M74HCT00. The hysteresis
characteristics (around 20% V
cc
) of all inputs allow
slowly changing input signals to be transformed
into sharply defined jitter-free output signals.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
The M74HCT132 is designed to directly interface
HSC
2
MOS systems with TTL and NMOS
components.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
so
b
te
le
M74HCT132B1R
M74HCT132M1R
ro
P
uc
d
s)
t(
TSSOP
T&R
M74HCT132RM13TR
M74HCT132TTR
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001
1/8
M74HCT132
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 4, 9, 12
2, 5, 10, 13
3, 6, 8, 11
7
14
SYMBOL
1A to 4A
1B to 4B
1Y to 4Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
L
H
H
B
L
H
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
bs
O
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
Parameter
Value
4.5 to 5.5
0 to V
CC
0 to V
CC
-55 to 125
Unit
V
V
V
°C
et
l
o
ro
P
e
uc
d
)-
(s
t
b
O
so
te
le
ro
P
uc
d
s)
t(
H
H
H
L
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Y
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500(*)
-65 to +150
300
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
2/8
M74HCT132
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
5.5
I
O
=-20
µA
I
O
=-4.0 mA
I
O
=20
µA
I
O
=4.0 mA
V
I
= V
CC
or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.2
1.4
0.5
0.6
0.4
0.4
4.4
4.18
Typ.
1.55
1.75
0.85
1.1
0.7
0.7
4.5
4.31
0.0
0.17
0.1
0.26
±
0.1
Max.
1.9
2.1
1.2
1.4
1.4
1.5
Value
-40 to 85°C
Min.
1.2
1.4
0.5
0.6
0.4
0.4
4.4
4.13
0.1
Max.
1.9
2.1
1.2
1.4
1.4
1.5
-55 to 125°C
Min.
1.2
1.4
0.5
0.6
0.4
0.4
4.4
Max.
1.9
2.1
1.2
1.4
1.4
1.5
V
V
V
V
V
µA
µA
Unit
V
P
V
N
V
H
V
OH
V
OL
I
I
I
CC
High Level
Threshold Voltage
Low Level
Threshold Voltage
Hysteresis Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
V
CC
(V)
4.5
t
TLH
t
THL
Output Transition
Time
t
PLH
t
PHL
Propagation Delay
Time
CAPACITIVE CHARACTERISTICS
bs
O
C
IN
Symbol
et
l
o
r
P
e
od
4.5
uc
s)
t(
O
-
s
b
te
le
o
1
Max.
15
30
8
19
r
P
Value
d
o
0.33
±
1
10
uc
4.10
s)
t(
0.1
0.40
±
1
20
T
A
= 25°C
Typ.
-40 to 85°C
Min.
Max.
19
38
-55 to 125°C
Min.
Max.
22
45
Unit
Min.
ns
ns
Test Condition
V
CC
(V)
T
A
= 25°C
Min.
Typ.
5
45
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
Parameter
Input Capacitance
Power Dissipation
Capacitance (note
1)
C
PD
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
3/8
M74HCT132
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM 1: PROPAGATION DELAY TIMES
(f=1MHz; 50% duty cycle)
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
4/8
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
